本項研究目標為開發網印塗佈高分子漿料，並應用於背表面鈍化(passivated emitter and rear cell, PERC)與選擇性射極(selective emitter, SE)矽晶太陽能電池之local contacts與selective emitter圖案製作。以塗佈高分子漿料搭配化學蝕刻之圖案製程技術，無需使用昂貴機台，可降低電池製作成本，且相較於雷射製程，可避免製作過程中的基板表面損傷。此外，我們以此製程為基礎，開發兼具PERC與SE結構太陽能電池，此概念可望有效地降低少數載子復合速率，以提升電池的光電轉換效率。 實驗初期開發高分子漿料，對溶質、溶劑種類選擇及比例、添加劑等調整，配置出其可適用於網印塗佈製程之高分子漿料；並具有良好抗蝕刻性及基板附著性，最後調整網版印刷參數以獲得均勻的高分子層於矽基板上。在化學蝕刻製程方面，本研究開發出PERC、SE結構共蝕刻技術，能良好調控蝕刻深度，並且不破壞矽基板表面織構化*結構，可有效簡化電池製作程序。 在太陽能電池實作成果方面，相較於一般全鋁背表面電場(full Al-BSF)電池，PERC結構可提升1.0%以上的光電轉換效率，SE結構可提升0.3%以上；而兼具PERC與SE結構太陽能電池之效率則能提升1.3%以上。 ;In this work, we have developed a simple pattering technique by using screen-printable polymer pastes as wet chemical etch masks for fabrication of passivated emitter and rear cell (PERC) and selective emitter (SE) solar cells. In addition, we also fabricated PERC+SE solar cells based on this patterning technique. Compared with conventional laser ablation methods, this patterning technique could potentially cost the manufacturing lower and avoid surface damage during the process. Thus, it can improve the conversion efficiency. In order to obtain well etch resistance and adhesion properties, we adjusted the compositions of polymer pastes and made them suitable for screen printing process. During the chemical etching process, we developed a co-etch process which can fabricate PERC and SE patterns simultaneously in one single etch process step. The etch rate can be adjusted and well-controlled, and the integrity of the initial pyramidal surface texture is also well maintained. As for the cell performance, PERC and SE cells promoted at least 1.0% and 0.3% efficiency, respectively, than conventional full Al-BSF cells. An efficiency of 1.3% could be improved for PERC+SE cells fabricated by using the co-etch process.
