石墨烯(graphene)具有高導電性、高光穿透率還具有高機械強度 等優異的物理特性。現在製作石墨烯的方法有很多種類，其中以高溫 的化學氣相沉積法最能生產出高品質石墨烯。 本研究主要利用(rapid thermal process, RTP)，將石墨烯整體製程 時間從數小時縮短至 1 小時內，使用銅箔作為基板，透過快速退火觀 察在銅箔上石墨烯晶粒尺寸的變化。其中影響石墨烯晶粒大小的參數 為: 溫度的高低，其最佳製程溫度為 1070℃；銅箔平整度，藉由化學 電拋光來改變銅箔粗糙度，獲得最佳粗糙度的電壓值為 8.8V，其獲 得最佳粗糙度為 0.406nm；氫氣/甲烷濃度的比例從 50 提高到 55 也 能改變石墨烯晶粒的大小。使用 OM(optical microscope)來初步觀測石 墨烯生長狀況，進一步使用 SEM(scanning electron microscope)觀察成 長趨勢，石墨烯顆粒尺寸從最初生長的 4.295μm成長到本研究最大的 尺寸 29.3μm，最大尺寸石墨烯 29.3μm製程參數為: 拋光電壓值為 8.8V、製程溫度 1070℃、氫氣/甲烷比為 55。;Graphene has many unique properties including high conductivity, transmittance and strength characteristics. There are many different processes to produce graphene. Chemical vapor deposition (CVD) is the best method among those processes to produce the high-quality graphene, however, the production of CVD wastes a lot of time. In this study, the graphene film is synthesized by rapid thermal process system in 40 minutes, compared to conventional CVD, it saves much time. Copper foil is the substrate in the high temperature (1070 oC) used for annealing. Temperatures, roughness of copper, the ratio of hydrogen/methane are the parameters affected graphene grain size. The best temperature to grow large grain graphene is 1070℃. Atomic force microscope reveals the reducing roughness (0.406nm) by chemical mechanical polishing(8.8V). The ratio of hydrogen/methane is also important to grow the grain size of graphene, the ratio of hydrogen/methane from 50 to 55 can increase the size of grain. optical microscope is adopted to know the appearance of the grain of graphene, then scanning electron microscope is used to observe the grain size of graphene. The results indicated that the increment of grain size from 4.295μm to 29.3μm (The temperature is 1070℃, 8.8V for chemical mechanical polishing, the ratio of hydrogen/methane is 55.) which is the biggest size in this study.
