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    題名: 碳六十衍生物於鈣鈦礦材料介面之研究及其太陽能電池之特性;Investigations of C60 derivatives deposited on perovskite thin films and photovoltaic performance of the corresponding solar cells
    作者: 黃偉宸;Huang, Wei-Chen
    貢獻者: 照明與顯示科技研究所
    關鍵詞: 鈣鈦礦太陽能電池;peroveskite
    日期: 2017-07-26
    上傳時間: 2017-10-27 14:25:43 (UTC+8)
    出版者: 國立中央大學
    摘要: 隨著化石能源的枯竭與環保意思的抬頭,綠色能源逐漸被人們重視,而綠色能源以太陽能最受到矚目。在太陽能電池之中,近幾年來以鈣鈦礦薄膜太陽能電池發展最為迅速,而鈣鈦礦薄膜太陽能電池以膜層堆疊的方式製作,我們將對主動層與電子傳遞層間的介面進行研究,以提升鈣鈦礦薄膜太陽能電池的效率及穩定性。
    本論文研究之鈣鈦礦薄膜太陽能電池架構為:Ag/PCBM:MC60/perovskite/PEDOT:PSS/ITO/glass。以不同比例的PCBM與MC60混合作為電子傳遞層(electron transport layer, ETL),藉由MC60的親水性提高電子傳遞層對主動層的覆蓋性,研究其對主動層(perovskite)介面的影響,以提升鈣鈦礦薄膜太陽能電池之功率轉換效率,架構中的Ag為電池的陰極、ITO(氧化銦錫)為電池的陽極,並以poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS)作為元件的電洞傳遞層(hole transport layer, HTL)。以此架構以一步驟溶液工程所製作的鈣鈦礦薄膜太陽能電池其最高功率轉換效率達到13.2% ,對應之開路電壓:0.974V、短路電流密度:20.57 mA/cm2與填充因子:69.1%
    ;Due to the worldwide decrease in fossil fuels as well as the rising awareness in environmental protection, green energy is becoming more and more important. Among all green energy solutions, photovoltaic solar cells and their potential to make a positive impact is highly anticipated. In recent years, organo-metal halide perovskite solar cells have been developed at an incredibly fast rate.
    Perovskite solar cells are fabricated using the layer by layer method while each layer bringing a different feature to the solar cell. In order to achieve an understanding of how to make these highly power conversion efficient, the following will discuss the structure and features found at the electron transport layer (ETL)/perovskite interface. In this thesis, the structure of the perovskite solar cells is Ag/ETL/CH3NH3PbI3/PEDOT:PSS/ITO/glass. The ETL was made by mixing PC61BM and MC60 in different ratios. A PEDOT:PSS(1:20 wt%) thin film was used as the hole transport layer. The CH3NH3PbI3 thin film was used as the light absorbing layer. In our perovskite solar cells, the best power conversion efficiency is 13.2%. The open-circuit voltage, short-circuit current density and fill factor are 0.974 V, 20.57 mA/cm2 and 69.1%, respectively.
    顯示於類別:[照明與顯示科技研究所 ] 博碩士論文

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