本論文是利用顯微光激發螢光光譜及顯微光激螢光激發光譜來分析砷化銦鎵量子點在砷化鎵多面體結構上的光學性質。 我們從掃瞄式電子顯微鏡知道量子點在砷化鎵多面體結構上的位置分布與砷化鎵基板上平台大小的長寬比有關，而我們利用顯微光激發螢光光譜及顯微光激螢光激發光譜來討論砷化鎵多面體結構與砷化銦鎵量子點的發光位置，另外從空間的光譜解析影像(spatial - mapping)可以發現砷化鎵多面體上不同平面的相對位置。 We present the results of PL spectra and PLE spectra to analyze the optical properties of InGaAs QDs and multi-facets structure. The number and position of QDs were determined using a scanning electron microscope and the position of QDs can be controlled by the size of the mesa on a GaAs substrate. We present the emission peak of QDs and multi-facets structure by using PL spectra and PLE spectra. From the two dimensional spatial mapping, we were determined the position of the different plane on the multi-facets structure.
