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    請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/7497


    題名: 非晶矽太陽能電池之材料成長、元件製作及特性分析;Growth, Fabrication and Analysis of Amorphous Silicon Solar Cell
    作者: 趙學禮;Syue-li Jhao
    貢獻者: 物理研究所
    關鍵詞: 太陽能電池;非晶矽;Amorphous Silicon;Solar Cell
    日期: 2007-06-21
    上傳時間: 2009-09-22 10:58:53 (UTC+8)
    出版者: 國立中央大學圖書館
    摘要: 本實驗主要目的是以電漿輔助化學氣相沈積系統(Plasma Enhanced Chemical Vapor Deposition,PECVD)在玻璃上成長元件選用較佳化氫化非晶矽i-a-Si:H、p-a-Si:H及n-a-Si:H單層膜各一條件,分析電性、光性、結構性及表面形貌。並將目前實驗的較佳化條件製成相同兩個pin太陽能電池,探討電性、效率及實驗的重複性。 對於i layer薄膜,其電阻率與文獻值比較是落在正常值裡;另外p layer和n layer薄膜的電阻率與文獻值比較,皆減少2個級數。此外,p layer和n layer薄膜的載子濃度也落在正常值內。針對 p layer實驗值與文獻中其他值比較,其τe和Le有不錯的特性;而 n layer 實驗值τh和Lh與文獻值相較之下,其特性就較一般。 從光能隙來看這三片樣品,其值皆落入1.5~2.0 eV,可以間接證明有非晶結構的存在。另外從拉曼光譜曲線來看,對 i layer與p layer而言,其峰值位於477 cm-1,便可直接證明其為非晶矽結構;對n layer而言,其有訊號在477 cm-1可直接證明有非晶矽結構外,另外有訊號在504和513 cm-1,也証實了在非晶矽結構裡,有著奈米晶矽結構的分布存在。 對於非晶矽薄膜在製作光電元件上,其表面粗糙度也是一個重大影響,而這三片樣品皆小於5 nm以下,對平整度而言算相當小的。 此外從SEM也可看出薄膜的均勻性和平整性。 另外從兩片相同條件元件來看,對其Pmax、Jsc、Voc及η而言,實驗上製作元件在相同條件與環境下其上述參數皆約相同,由此可證實此實驗有高度的重複關係性,對於所成長的薄膜與元件上,其品質近似的關連性是可被相信的。 The main goal of the experiment is to grow hydrogenated amorphous silicon i-a-Si:H, p-a-Si:H and n-a-Si:H thin films of better single condition chosen to fabricate devices on glass by PECVD (plasma enhanced chemical vapor deposition) for analyzing electrical, optical, structural and morphological characteristics. Then, the two same pin solar cells are made of better condition in order to study electrical characteristics, efficiency and repeated characterization of the experiment. For i layer thin film, its resistivity is in the normal value compared with the reference value ; the resistivities of the other p layer and n layer thin films are both smaller by two orders of magnitude than that of the reference values. In other words, the carrier concentrations of p layer and n layer thin films are in the normal values. The experimental values of player are compared with another values of the reference, and its τe and Le are with better characteristics ; the experimental values of n layer are compared with another values of the reference, and its τh and Lh are with normal characteristics. To check the three samples from optical band gap, their values are all in the range from 1.5 to 2.0 eV. Therefore, it can indirectly show the existence of the amorphous structure. From the Raman spectrum curves, its peak value is at 477 cm-1 and which shows that the structure for player is the amorphous silicon. On the other hand, the peak value at 477cm-1 depicts the existence of the amorphous silicon structure for n layer. Moreover, two peaks at 504 and 513 cm-1 proves the existence of the nanocrystal silicon in the amorphous silicon structure for n layer. For the amorphous silicon thin films made in the electrical and optical devices, their surface roughness is also an important affection where they are under 5 nm for the three samples with less for the surface roughness. Furthermore, the films are checked for the uniforms and roughness by SEM. Considering Pmax, Jsc, Voc and η in the same conditions and environments from the two same devices, their physical values are the same experimentally, and it proves the high repeated characteristic. As a result, the associated characteristic of the similar qualities for the growth of the thin films and devices can be believed.
    顯示於類別:[物理研究所] 博碩士論文

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