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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/74993


    Title: 應用金屬-半導體接面原理實現無光源下 製造N型多孔矽之研究;Study of application of metal-semiconductor junction principle on the production of N-type porous silicon in the dark
    Authors: 鄭詔元;Cheng, Chao-Yuan
    Contributors: 機械工程學系
    Keywords: N型多孔矽;金屬-半導體接面;電化學蝕刻;順向偏壓;光激發光;暗室;N-type porous silicon;metal-semiconductor junction;electrochemical etching;forward bias;photoluminescence;in the dark
    Date: 2017-06-21
    Issue Date: 2017-10-27 16:15:13 (UTC+8)
    Publisher: 國立中央大學
    Abstract: ㄧ般而言,以電化學法製造N型多孔矽必須外加光源照射矽晶圓,以達電子-電洞對分離,產生電洞,才能進行蝕刻。另一方面,在近期研究指出使用外加電場、磁場或是P-N接面方式可暗室製造N型多孔矽。本研究應用金屬-半導體接面原理,以銅片電極為金屬端,N-Type矽晶圓為半導體端,在順向偏壓下使空間電荷區變薄,使得電子-電洞對分離,實現不以任何光源輔助即可蝕刻出N型多孔矽。另外,研究中發現使用1064nm雷射輔助蝕刻,發現能使多孔矽表面以及光激發光現象更為均勻。;In general, N-type Si must be illuminated in order to drive electrochemical etching, light generates electron-hole pairs. On the other hand, there are there novel methods to assist hole generation and enhance the growth porous silicon on n-type silicon in the dark, respectively, added electric field, magnetic field, P-N junction. This study is based on the principle of metal-semiconductor junction, the copper electrode is the metal side, the N-Type silicon wafer is the semiconductor side, and the space charge region is thinned under the forward bias,
    so that the electron-hole pairs are separated, to achieve without any auxiliary light source can be etched N-type porous silicon. In addition, the study found that the use of 1064nm laser-assisted etching, porous silicon surface and the phenomenon of light excitation can be more uniform.
    Appears in Collections:[Graduate Institute of Mechanical Engineering] Electronic Thesis & Dissertation

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