本篇論文我們利用金屬自主性排列方式，方便地組成金屬奈米線綜合體。我們採用 NiAl(100)平面往 [010] 方向傾斜小角度得到階梯表面，此樣品經由氧化過程，得到有序氧化鋁薄膜區域，在此區域中有突起的結構會沿著 [001] 方向，且它的長度可以到微米尺度。而進一步地利用氣相沉積方法，將鈷奈米團簇成長在氧化鋁薄膜上，而鈷奈米團簇會優先依著有序氧化鋁薄膜區域的突起結構來排列( 沿著 [001] 方向來延展 )，然後得到一維奈米金屬線，其寬度小於三奈米、長度高達至微米尺度。 We present a simple, self-organized approach for synthesis of arrays of supported metal nanowires. By oxidizing NiAl surfaces vicinal to the (100) plane titled along the crystallographic direction [010], we produce ordered θ-Al2O3 thin-films exhibiting highly uniform protrusion stripes which propagate uniquely in crystallographic direction [001] of the NiAl and attain length of micrometer-scale. These protrusions are preferential nucleation centres for vapor-deposited metal; the nanoclusters grown from vapor-deposited metal are thus aligned and form one-dimensional arrays along the [001] direction. The Co cluster arrays form readily nanowires with a width as small as 3 nm and length up to micrometers.
