透明氧化物薄膜電晶體與電晶體式記憶體之分析與應用;Analysis and Application for Transparent Oxide Thin Film Transistor and Organic Thin Film Transistor Type Memory

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題名:	透明氧化物薄膜電晶體與電晶體式記憶體之分析與應用;Analysis and Application for Transparent Oxide Thin Film Transistor and Organic Thin Film Transistor Type Memory
作者:	張簡聿心;Chien, Yu-Hsin Chang
貢獻者:	化學工程與材料工程學系
關鍵詞:	電晶體;記憶體
日期:	2017-11-13
上傳時間:	2018-01-16 10:13:08 (UTC+8)
出版者:	國立中央大學
摘要:	本論文可分為兩部分研究，第一部份為溶液製程低啟動電壓全透明氧化物薄膜電晶體，第二部分為施體受體與連接結構對電晶體式記憶體之應用。第一部分研究中，以氧化銦錫（Indium Tin Oxide, ITO）玻璃為基板及底電極，在上面沉積厚度約120 nm的TSO介電層薄膜(TSO)，其電容值約172 nF cm-2、介電常數約27.5。在TSO介電層上方以噴塗法在基板預熱400 oC下噴塗厚度約65 nm 的氧化鋅(ZnO)薄膜當半導體層，接著在400 oC下退火1 min。透明電極製備方式有兩步驟，先以噴塗法透過不鏽鋼遮罩噴塗一層AgNWs，接著再噴塗一層PEDOT:PSS。電晶體的操作電壓僅3 V，電流開關比約105，亞閾值斜率0.36 V，亞閾值斜率815 mv dec-1，電子遷移率9.1 cm2 V-1 s-1。結果呈現其具有良好電性，不受實驗環境影響，且電晶體元件達到透明度約80 %。第二部分研究中，以Si/SiO2為基底，接著以旋轉塗佈法沉積一層駐極體用來捕捉電洞與電子，駐極體分別是TPA-PIS (Triphenylamine Sulfonyl-containing polyimide)、TPA-PES (Triphenylamine Sulfonyl-containing polyether)與TPA-PETS (Triphenylamine Sulfonyl-containing polyester)，它們擁有相同的施體 (Triphenylamine, TPA)與受體 (Sulfonyl group)但不同的連接結構(imide linkage、ether linkage、ester linkage)，藉由探討分析電性與高分子駐極體結構可以判斷三者皆為揮發性記憶體，然而由於高分子駐極體能階(HOMO與LUMO)、結構等特性導致分別擁有不同電性特徵。藉由本研究可以了解不同結構對電晶體式記憶體之影響。 ;The research can be divided into two parts. The first one is Solution-processable low-voltage driven transparent oxide thin film transistor. The second is Donor Acceptor and linkage effect for transistor type memory devices application. In the first part, we use ITO glass as substrate and gate. Then, about 120 nm TSO thin film was deposited on ITO glass. Its capacitance is approximately 172 nF cm-2, dielectric constant is 27.5. The TSO/ITO glass substrate was preheated to 400 oC, and then 65 nm ZnO semiconductor layer was deposited on it by using spray coating method, followed by annealing at 400 oC for 1 min. The elecrtrode was fabricated by two steps. Firstly, we deposited AgNWs through a shadow mask by using spray coating method. Then, we deposited another PEDOT:PSS layer through the shadow mask on the same position as we deposited AgNWs. The operation voltage of the thin film transistor is only 3 V, on/off current ratio 105, threshold voltage 0.36 V, subthreshold swing 815 mv dec-1, electron mobility 9.1 cm2 V-1 s-1. The results show the thin film transistor possessed well electrical characteristics and was stable under ambient air while doing experiment. In the second part, we use SiO2/Si as substrate and deposited electret by using spin coating method. Electret layer is fabricated for the purpose of storing holes or electrons. In this work, the electrets are TPA-PIS (Triphenylamine Sulfonyl-containing polyimide)、TPA-PES (Triphenylamine Sulfonyl-containing polyether) and TPA-PETS (Triphenylamine Sulfonyl-containing polyester), respectively. By researching and analyzing the electric characteristics and structure effects, we can be told that transistor type memory devices based on the three materials are all volatile memory. Yet, different structure, energy level or other relative characteristics can influent electric characteristics of transistor type memory. Therefore, we can learn knowledge by analyzing the relationships between structure and its effects on memory characteristics.
顯示於類別:	[化學工程與材料工程研究所] 博碩士論文

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