| 摘要: | 本研究是以Si半導體材料為靶材，使用高功率脈衝磁控濺鍍(High-Power Impulse Magnetron Sputtering, HiPIMS)沉積氮化矽(Silicon Nitride, Si3N4)薄膜於B270玻璃基板。使用高功率脈衝磁控濺鍍，可以藉由調整脈衝的中斷時間，並將能量儲存累積於脈衝模組中的電容，再將電能釋放出來，於是可以讓靶材的原子獲得更具有強大的能量來濺射到基板上，可以使薄膜獲得具有足夠的能量，並且可以增加薄膜的附著力與緻密性。
選定矽這種材料的原因主要是在光學產業中可應用在光學玻璃鍍製氮化矽薄膜的製造。在光學玻璃氮化矽薄膜中使用矽材料的好處就是可以增加玻璃的光學高穿透性，並且它具有高折射的效果。
近年來電漿製程技術被運用在真空鍍膜，在低壓真空的狀態之下
電漿內部產生不同的變化特性同時又存在電漿輝光的發光特性，而這些存在電漿內部所有的性質變化，就可以使用光發射光譜儀(Optical Emission Spectroscopy, OES)來作為監控電漿。
研究初期以硬體架設方面搭配光發射光譜儀來診斷高功率脈衝磁控濺鍍之電漿。研究過程中其結合電漿光譜軟體，以固定功率為600w、氬氣流量為27sccm、開始工作時間Ton=50μs，再藉由不同的脈衝儲能時間Toff=200μs及Toff=900μs和不同的氮氣流量，來偵測電漿內部元素光譜強度之變化，並可以得知光譜強度在波長的位置，其再結合資料庫軟體做比對更可以完整地分析出電漿的電離現象，由現象可以預知氮氣的流量，來鍍製出氮化矽薄膜。研究最後再針對氮化矽薄膜來分析薄膜的光學特性包含穿透率(T%)、折射率(n)與消光係數(k)並且來探討在怎麼樣的脈衝儲能時間Toff=200μs及Toff=900μs和不同的氮氣流量之下，而它的穿透率(T%)、折射率(n)與消光係數(k)是最好的。
研究結果以最佳脈衝儲能時間為Toff=900μs、氮氣流量為20sccm、穿透率(T%)為91.76%、折射率(n)為2.04、消光係數(k)最小為0，成功地鍍製出高折射率無吸收的均勻性氮化矽光學薄膜。;In this study, High-Power Impulse Magnetron Sputtering (HiPIMS) deposition Silicon Nitride (Si3N4) thin films on B270 glass substrate was investigated using Si semiconductor material as the target. Using high power pulsed magnetron sputtering, by adjusting the pulse interruption time and the capacitance energy storage module for pulse accumulation, then the electric energy is released, for can let the target atom has more powerful energy to sputtering onto the substrate, the thin films have enough energy and can increase thin films the adhesion and density.
The reason for choosing silicon material is that it can be used in optical industry to manufacture silicon nitride thin films on optical glass. The advantage of using silicon material in optical glass silicon nitride thin films are to increase the optical high penetration of glass, and it have high refraction effect.
In recent years, plasma processing technology is used in vacuum coating, luminescent properties and existing plasma glow under low vacuum state plasma generated inside the change of different characteristics, and these are all the electric properties of plasma, can be used Optical Emission Spectroscopy (OES) as the monitoring plasma.
The optical emission spectroscopy was used to diagnose the high power pulsed magnetron sputtering plasma at the beginning of the research. In the process of study, it combines the plasma spectrum software with the fixed power of 600w, the argon flow rate of 27sccm, the start working time Ton=50μs, and then uses different pulse energy storage time Toff=200μs and Toff=900μs and different nitrogen flow rate, to detect the spectral intensity changes of elements in plasma, and to know the spectral intensity at the wavelength position, It can be combined with the database software to do more complete analysis of the plasma ionization phenomenon, and the flow rate of nitrogen can be predicted by the phenomenon, to produce the silicon nitride thin films. Final study, the optical properties of the thin films were analyzed for the silicon nitride thin films, including the transmittance (T%), refractive index (n) and extinction coefficient (k) and were discussed under what kind of pulse energy storage time Toff=200μs and Toff=900μs and different nitrogen flow rate, and its transmittance (T%), refractive index (n) and extinction coefficient (k) were the best.
The research results in the best pulse energy storage time was Toff=900μs, the nitrogen flow rate was 20sccm, the transmittance(T%) was 91.76%, the refractive index (n) was 2.04, the minimum extinction coefficient (k) was 0, successfully coated with high refractive index no absorption of uniform silicon nitride optical thin films. |
