本實驗室利用了熱蒸鍍低真空冷凝製程製作銦奈米顆粒。我們採用16nm的銦奈米顆粒與26nm的鈷奈米顆粒，依各種不同質量比例調配後均勻混合，壓合製作成(In)x(Co)100-x奈米複合樣品，其中x=100、50、30、20、10；藉由不同比例的鈷改變樣品中的內部磁場來影響電阻率隨外加磁場改變，造成磁阻效應。並且施予不同的壓力製作不同壓合密度的樣品，研究顆粒間距對電阻率的影響，藉此探討磁性奈米複合材料的電子傳輸機制。 我們量測樣品的電阻率、磁阻率與磁化率，發現銦與鈷製成的複合材料的電阻率趨向於非金屬性，電阻率會隨溫度的下降而增加，且在低溫時會快速增加，我們利用電子定域跳躍模型解釋此現象。磁阻率對外加磁場的行為偏向於ZMR模型，外加場由0T開始增加時，磁阻率會隨外加磁場增加而增加，且會達到某一極限，當外加磁場持續增加，磁阻率會轉而變小，最後會得到一負磁阻。我們利用磁場下能階分裂與自旋電子分布解釋磁阻率轉折的現象。 Indium nanoparticle was fabricated by thermal evaporation method .Sample purity and diameter were characterized by x-ray diffraction scheme. The analysis result show the pure 16 nm indium nanoparticle were obtained. No trace of impurity and oxidation was found. The result powder was mix with 28 nm cobalt with proper mass ratio, which defined as (In)X(Co)100-X(X=0,50,30,20,10). Temperature profile of electric transport properties of all samples were study by DC resistivity system. The measured curves were analysis both by tunneling and Mott’s VHR theory. The fitting result show Mott’s three-dimensional variable range hopping could well describe all resistivity cures, which implies the electric transport were implies three dimensional isotropic. The MR ratio of all samples at selective temperature was measured . Positive magnetoresistance (MR) at low applied magnetic fields to a negative MR at high fields were observed in our In/Co nanocomposites．This behavior is originated from Zeeman split of free electron level(ZMR).Two competitions mechanism is suggested .At first , the applied field described the electron levels into parallel and antiparallel the field, which caused lower hopping activation energy of high spin electrons. In the second, the applied field also reduce number of population of such electrons . So that , results positive to negative MR ratio transition.