半導體製程中晶圓表面溫度及薄膜成長率與折射率之即時監控系統開發;Development of In-situ Monitoring System for the Surface Temperature of Wafer, Thin Film Growth-rate and Refractive Index in Semiconductor Process

NCUIR > Engineering College > Graduate Institute of opto-Mechatronics > Electronic Thesis & Dissertation > Item 987654321/75874

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/75874

Title:	半導體製程中晶圓表面溫度及薄膜成長率與折射率之即時監控系統開發;Development of In-situ Monitoring System for the Surface Temperature of Wafer, Thin Film Growth-rate and Refractive Index in Semiconductor Process
Authors:	李文浩;Li, Wen-Hao
Contributors:	光機電工程研究所
Keywords:	即時量測;半導體;晶圓參數;熱輻射;薄膜;in-situ;semiconductor;wafer parameters;thermal radiation;thin film.
Date:	2018-01-22
Issue Date:	2018-04-13 11:01:13 (UTC+8)
Publisher:	國立中央大學
Abstract:	本研究開發一套半導體製程參數量測系統，用於即時監控半導體薄膜製程中晶圓表面溫度、薄膜成長速率與薄膜折射率等參數。根據本研究之光路、機構與電控設計來整合溫度量測模組與薄膜量測模組於同一量測架構，並以簡易之架構與原理來推算其結果。基於黑體輻射理論開發出非接觸式的溫度量測系統，並搭配位移平台來達到晶圓表面溫度全貌量測，以利將量測系統應用於實際製程旋轉情況下；基於薄膜光學干涉理論進行薄膜反射率量測，並根據反射率曲線擬合出薄膜成長速率與其折射率。本研究設計了晶圓加熱實驗來驗證本量測系統之量測能力，同時接收405 nm與940 nm波段之熱輻射訊號來因應不同製程需求所需要之量測波長，且結合位移平台與所開發之演算法來進行晶圓表面溫度全貌量測。其實驗結果，本量測系統於溫度量測方面，量測範圍可量測在500℃以上之物體，其準確度與商用輻射高溫計比較差量約為1℃。於薄膜成長速率與折射率量測方面，設計了空氣薄膜實驗來驗證本量測系統於薄膜參數量測能力。空氣薄膜實驗中，以楔形稜鏡與陶瓷壓電位移平台來模擬薄膜生長之情形，並以不同平台移動速率來效仿不同薄膜成長速率。本量測系統能量測到最慢薄膜成長速率為0.1 nm/s，所量測得薄膜成長速率與位移平台回傳之速率比較差量小於1%；量測之折射率與空氣之折射率定義比較其差量小於0.1%。 ;An in-situ monitoring system for the semiconductor process is presented, which is used to monitor the temperature of wafer surface, the growth-rate and the refractive index of thin film in the semiconductor thin film process. The principles of the monitoring system are based on the blackbody radiation theorem, the optical interference theorem, and combined with the displacement stage to achieve the results of the two-dimensional temperature measurement. This research verifies the feasibility of the temperature measurement module by the experiment of heating wafer. In this measurement system, and detected the 405 nm and 940 nm thermal radiation for the different process, the 940 nm was used for general silicon wafer, and the 405 nm was used for the wafer with transparent, such as sapphire wafer, SiC wafer. For the two-dimensional temperature measurement, we detected the reflection light by the wafer to simulate the situation of heating wafer. For the thin film growth-rate measurement, this research designed a simulated experiment to verifies the thin film module, that is two wedge-prism clip the air layer, and changes the thickness by the piezoelectric(PZT) actuator, the measurement results compare with the return value of PZT. The experiment results presented that the measurement system is suitable to measure the object with 500℃ above for the temperature measurement, and the results compared with the commercial pyrometer, the relative differences are about 1℃. For the thin film measurement, the system is suitable to measure the growth-rate down to 0.1 nm/s, and the results compared with PZT and the refractive index, the relative differences are respectively less than 1% and 0.1%.
Appears in Collections:	[Graduate Institute of opto-Mechatronics] Electronic Thesis & Dissertation

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