柴氏法生長6~8吋矽單晶之高溫梯爐體與製程設計模擬;Effects of different furnace designs on the temperature field during Czochralski growth of 6~8 inch monocrystalline silicon crystals

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題名:	柴氏法生長6~8吋矽單晶之高溫梯爐體與製程設計模擬;Effects of different furnace designs on the temperature field during Czochralski growth of 6~8 inch monocrystalline silicon crystals
作者:	邱彥智;Chiu, Yen-Chih
貢獻者:	能源工程研究所
關鍵詞:	單晶矽;柴式法;溫梯;Single crystalline-silicon (sc-si);CZ;Temperature gradient
日期:	2018-08-14
上傳時間:	2018-08-31 14:16:55 (UTC+8)
出版者:	國立中央大學
摘要:	摘要單晶矽為生產半導體的主要材料，為生產低電阻的半導體元件，需要在柴式法(Czochralski method ,Cz)生長單晶矽製程中，增加摻雜硼、磷、砷的濃度，進而降低矽晶圓的電阻。然而在晶體長度100~300mm時，因為重摻物種濃度高，容易導致矽晶晶棒組成過冷(Constitutional supercooling)，導致晶棒失去單晶結構。本研究使用，以有限體積法為基礎的長晶模擬軟體CGSim，建立長晶爐的物理模型，探討如何提升晶體溫梯，避免組成過冷發生。本研究首先探討在生長75公斤6吋矽單晶時，增加冷卻環設計對熱場之影響。結果顯示當冷卻環長度加長、表面發射率升高，可以提升晶體溫梯。並以此高溫梯熱場與原熱場，比較不同晶體轉速、坩堝轉速搭配下，對熱流場、晶體溫梯與介面形狀之影響。使用原熱場設計搭配最佳生長參數，晶體溫梯從4.6上升到5.2(K/mm)，(提升13.6%)；使用高溫梯熱場搭配最佳生長參數，晶體溫梯從4.6上升到5.6(K/mm)，(提升21.9%)。另外討論加大產量，生長120公斤8吋矽晶之模擬。模擬原熱場與原本之生長參數，比較高溫梯熱場與最佳生長參數，在熱流場、溫梯與介面形狀的差異。研究發現在生產120公斤8吋矽晶時，使用高溫梯熱場與最佳參數，晶體溫梯從3.5上升到4.9(K/mm)，(提升晶體溫梯39%)。 ;Abstract The single crystalline-silicon (sc-si) is a major material for semiconductor. Recently, the demand for low resistivity wafer is increasing. In order to produce low resistivity wafer, the dopant concentration should be enhanced during the growth of Czochralski silicon. As the dopant concentration increased, the probability of losing structure increased as well. The phenomenon of losing structure is also known as constitutional supercooling. Increasing the temperature gradient in crystal is one method to prevent constitutional supercooling. The Cz furnace model is numerically investigated by CGSim (Crystal Growth Simulator). In this study, the numerical simulation has been performed to analyze how to enhanced the temperature gradient in crystal. First, compare the effect of adding cooled jacket in the furnace of 75kg 6 inch silicon. As the length of cooled jacket increased, the temperature gradient enhanced. Increasing the emissivity of cooled jacket could enhance the temperature gradient as well. Based on this hot zone design, comparing the effect of different crystal and crucible rotation rates. In the case of 75kg 6 inch silicon, the result showed that using the original hot zone with optimized growth parameter can increase the temperature gradient by 13.6% (from 4.6 to 5.2 K/mm). While using the cooled jacket design with optimized growth parameter could increase the temperature gradient 21.9% (from 4.6 to 5.6 K/mm). In addition, this study discusses the larger size production. If we using the optimized hot zone design with optimized growth parameter, the temperature gradient could be increased 39% (from 3.5 to 4.9 K/mm).
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