N型的多孔矽製作的共識是需要光照，由於N型半導體的主要載子是電子，在暗室中需要一些特殊裝置才可以生產N型多孔矽，例如利用磁場、側向電場、PN接面等。本實驗發現金屬與半導體接面所生成的以及半導體及液體接面所生成的的蕭特能障，能使電洞在電化學蝕刻中導向蝕刻液接面以進行多孔矽蝕刻，完成在無光源蝕刻N型多孔矽。此實驗中也同時探討可見光雷射對於蝕刻的影響，利用光電效應所產生的電子電洞對配合蕭特機能障的趨勢，使得加速表面的蝕刻，並且得到特殊的蝕刻表面結構。;The common sense for the fabricating N-type porous silicon is that illumination is required. Since the major carrier in a N-type semiconductor is electrons, some special devices are needed in the dark room to produce N-type porous silicon, such as magnetic field, lateral electric field, PN junction, etc. In this experiment, it was found that the Schottky barrier formed by the junction of metal and N-type semiconductor and the junction of N-type semiconductor and HF electrolyte can drive holes to the silicon/electrolyte junction to perform an electrochemical etching. In this experiment, the effect of visible laser on the electrochemical etching is also discussed. The electron-holes generated by photo-electronic effect matches the Schottky barrier that accelerates the etching of the surface and obtains a special surface nanostructure.
