碳化矽電泳拋光矽晶圓表面粗糙度之研究;A study on surface roughness of silicon wafer by using SiC electrophoretic deposition polishing

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Title:	碳化矽電泳拋光矽晶圓表面粗糙度之研究;A study on surface roughness of silicon wafer by using SiC electrophoretic deposition polishing
Authors:	劉邦霽;LIU, BANG-JI
Contributors:	機械工程學系
Keywords:	碳化矽;電泳拋光;矽晶圓
Date:	2018-08-23
Issue Date:	2018-08-31 15:06:04 (UTC+8)
Publisher:	國立中央大學
Abstract:	本文是運用亞微米碳化矽對矽晶圓進行電泳拋光與傳統機械拋光，以改善矽晶圓的表面粗糙度。電泳沉積具備均勻披覆與低成本等特性，增加拋光輪吸附研磨顆粒的能力，本文研究希望開發一種結合電泳沉積之拋光技術，提升矽晶圓拋光效率與降低表面粗糙度，可應用在晶圓再生。本文使用傳統機械拋光與電泳沉積拋光製程分別對加工時間、軸向荷重、拋光輪轉速等製程參數進行實驗，並比較實驗後的矽晶圓表面粗糙度、表面形貌，來進行分析探討。根據實驗結果，矽晶圓試片於機械拋光實驗中，原始表面粗糙度值可由Ra 0.120 μm、Rmax 1.16 μm降為Ra 0.014 μm、Rmax 0.383 μm；矽晶圓試片於電泳拋光實驗中，原始表面粗糙度值可由Ra 0.120 μm、Rmax 1.16 μm降為Ra 0.013 μm、Rmax 0.338 μm。證實應用電泳沉積機制能改善機械拋光製程下的矽晶圓表面粗糙度。 ;This research is focus on electrophoretic deposition polishing and mechanical polishing to improve the surface roughness of silicon wafer. The polishing in this article are experimented with the parameters of load, polishing time, polishing wheel rotation speed. The roughness of silicon wafer the surface morphology of the results are investigated and analyzed. The experimental results indicate that the original roughness of silicon wafer are Ra 0.120 μm、Rmax 1.16 μm can be reduced to Ra 0.014 μm、Rmax 0.383 μm in mechanical polishing process. The original roughness of silicon wafer are Ra 0.120 μm μm、Rmax 1.16 μm can be reduced to Ra 0.013 μm、Rmax 0.338 μm in electrophoretic deposition polishing process. This research verified that the electrophoretic deposition polishing can improve the surface roughness of silicon wafer.
Appears in Collections:	[Graduate Institute of Mechanical Engineering] Electronic Thesis & Dissertation

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