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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/78779

    Title: 適用於毫米波功率放大器之高功率氮化鋁銦/氮化鎵高電子遷移率電晶體開發;Development of High Power Alinn/Gan High Electron Mobility Transistors for Millimeter Wave Power Amplifiers
    Authors: 綦振瀛;邱顯欽
    Contributors: 國立中央大學電機工程學系
    Date: 2018-12-19
    Issue Date: 2018-12-20 13:48:17 (UTC+8)
    Publisher: 科技部
    Abstract: 針對第五代(5G)行動通訊頻寬的需求,將載波頻率提升至毫米波是未來的趨勢,因此,世 界各國的研發團隊已紛紛投入相關研究。5G系統基地台之功率放大器也勢必更大幅地改用具 效率高、體積小優點的氮化鎵功率電晶體。目前的氮化鎵功率電晶體是以氮化鋁鎵/氮化鎵異 質結構為主,然而受限於其氮化鋁鎵的成分與厚度,高頻特性有所限制。在此計晝中,我們擬 以低界面應力的氮化鋁銦/氮化鎵異質結構來取代傳統的氮化鋁鎵/氮化鎵結構,藉由此新結構 特有的高濃度二維電子氣來降低電晶體通道電阻,提高電流密度。此計晝將以矽基板上0.1微 米T型閘極電子遷移率電晶體為研發載具,進行磊晶技術,製程技術與封裝技術之開發,並 展示10 W級Ka頻段(30 GHz)之功率電晶體。 ;In response to the demand of bandwidth of future 5th generation mobile communications, moving the carrier frequency to millimeter wave range has been considered a feasible solution and pursued by several research groups worldwide lately. The power amplifiers in base station of 5 G system are expected to be dominated by GaN-based power transistors, which have the merits of high efficiency as well as high power density. Up to date, GaN power amplifiers based on AlGaN/GaN heterostructure are the products available in the market. However, their performance is limited by the composition and thickness of the AlGaN layer. In this project, we propose an AlInN/GaN heterostructure, which has low stress and high two dimensional electron gas density for high current density operation, to replace the conventional AlGaN/GaN counterpart. Using 0.1 um T-gate high electron mobility transistor on Si substrate as the development vehicle for epitaxy, fabrication and packaging technologies, 10 W Ka-band (30 GHz) power transistors will be demonstrated.
    Relation: 財團法人國家實驗研究院科技政策研究與資訊中心
    Appears in Collections:[電機工程學系] 研究計畫

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