本計畫係採用奈米科技研究熱介面材料(Thermal Interface Materials, TIMs) 之開發及性能探討。因高功率電子元件容易產生大量熱能，故需以熱介面材料填補元件間之間隙進而提升熱傳導性。此計畫製備添加石墨烯之新型異質接面奈米結構熱介面材料，應用於高功率IGBT。計畫預計以三年期間，分別就下列項目進行開發:第一年主要以現有小型風力發電系統之中低功率(15kW)絕緣閘雙極電晶體(Insulated Gate Bipolar Transistor, IGBT)為探討對象，發展具高熱導係數奈米層狀金屬之新型異質接面奈米結構之熱介面材料，並實際應用於中低功率15kW之IGBT。另外，以中低功率15kW之IGBT晶片、焊料、鋁接線與(Direct bonded copper)進行微結構分析並探討其失效原因，預計達成之技術規格為：熱導率平行/垂直方向: 25-30 W/mK/1-5 W/mK。目前國際上最先進的領先指標規格為熱導率平行/垂直方向: 14 W/mK/2 W/mK [1]第二年主要探討高聚光太陽能發電系統之中高功率(100kW)之IGBT，並發展具高熱導係數奈米銀線(AgNWs)網狀系統之新型異質接面奈米結構散熱介面材料，實際應用於100kW高功率IGBT散熱系統。另外本年度也探討中高功率IGBT模組於高功率正弦負載作用下的分析，研究中高功率IGBT晶片熱疲勞破壞進行分析，並透過加入新型異質接面奈米結構熱介面材料使其高功率IGBT有效延長使用壽命，預計達成之技術規格為：熱導率平行/垂直方向: 30-40W/mK/3-7W/mK。第三年以現有風力發電與高聚光太陽能發電系統串列式整合為高功率(250kW)發電系統，且發展具高熱導係數之新型異質接面vertical double percolation奈米結構熱介面材料。另外，透過製備奈米銀顆粒 (SNPs) 和單壁奈米碳管 (SWCNTs) ，以及將市售石墨烯粉末球磨處理後採用網版印刷，使奈米銀顆粒 (SNPs) 和單壁奈米碳管 (SWCNTs)均勻製程於石墨烯片基板，應用於高功率(250kW以上)IGBT與鋁散熱鰭片之間的溫度量測。預計達成之技術規格為：熱導率平行/垂直方向: 40-50W/mK/6-10W/ mK。 ;This project aims to use the novel nano-textured percolation structures with the application to thermal interface material (TIMs) utilized in the converter of the renewable energy sources of wind and solar cells. Scheme will be the combination of nano-textured percolation structures with the ball milling graphene powders. Applied the proposed TIMs to the interface of heatsink and heat generation source (primarily the insulated gate bipolar tranistor, IGBT) for the temperature measurement for the efficient thermal management. Respective aims and project goal can be summarized as follows:Year 1: Research and development of the novel nano-textured percolation structures of lamellar configuration with high thermal conductivity. The applications will be the TIMs for the15kW IGBT used for renewable wind turbine. In addition to collecting the relevant literature relevant to low-power IGBT failure modes and Direct bonded copper (DBC) failure, we carry out mechanical simulations using a finite element method (FEM) simulator (COMSOL) for a simplified 3D power assembly to calculate the different temperatures fields due to natural and forced convection conditions. The observation of power failure modes on the cross-sectional view. aimed primarily at low-power IGBT chips and solders, aluminium wiring micro-structure analysis and its failure, and substitute thermal interface grease making its high power IGBT extend service life. The specific targets are the followings：Thermal conductivity In-plane/Through-plane: 25-30 W/mK/1-5 W/mK, as favorably compared with the latest leading indicators of In-plane/Through-plane thermal conductivity: 14 W/mK/2 W/mK [1].Year 2: Development of the novel nano-textured percolation structures of silver nanowires networks (AgNWs) with much improved high thermal conductivity. The applications will be the TIMs for the100kW IGBT used for renewable solar cells. Moreover the second yeart also focused on high power IGBT module subjected to sinusoidal loading at nominal power level. The specific targets are the followings：Thermal conductivity In-plane/Through-plane: 30-40W/mK/3-7W/mK.Year 3: Research and development of the novel vertical double percolation structures with high and tunable thermal conductivity. The applications will be the TIMs for the 250kW IGBT module used for serial-connected renewable energy sources of wind turbine and solar cells. The third year is the direct application with TIMs that are ubiquitously used for enhancing heat transfer in electronics packages and crucial importance in improving, particularly in high density electronics at regions of exceedingly high temperatures. In this work, we prepared graphene powder was ground to a nanometer scale by a ball mill. silver nanoparticles (SNPs) and single wall carbon nanotubes (SWCNTs) based nanocomposites with graphite graphene nanoplatelets (GNPs) by using screen printing process to confirm the conformal uniformity of SNPs and SWCNTs spreading on the GNP and measured temperature between IGBT and aluminum heat sink.The specific target is the followings： The specific targets are the followings：Thermal conductivity In-plane/Through-plane: 40-50W/mK/6-10W/mK.
