柴氏長晶法生長矽單晶過程雜質控制之數值模擬分析;Numerical Investigations of Impurity Transport Control during the Single Silicon Crystal Growth Process by Czochralski Method

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题名:	柴氏長晶法生長矽單晶過程雜質控制之數值模擬分析;Numerical Investigations of Impurity Transport Control during the Single Silicon Crystal Growth Process by Czochralski Method
作者:	陳志臣
贡献者:	國立中央大學機械工程學系
关键词:	柴氏長晶法;矽晶圓;數值模擬;熱質流輸送;雜質控制;Czochralski Crystal Growth;Silicon Crystal;Numerical Simulation;Fluid;Heat;and Mass Transport;Impurity Control
日期:	2019-02-21
上传时间:	2019-02-21 15:10:32 (UTC+8)
出版者:	科技部
摘要:	近年來隨著能源產業的發展，及無線通訊、無線充電、LiDAR技術的發展，使高功率元件成為最被廣泛注意的半導體元件之一。目前矽(Si)仍為主要材料，為了實現更高功率密度的元件，需要開發低氧及碳雜質的高品質矽晶圓基材。如何使用商用主要生產方法柴氏Czochralski（Cz）長晶技術，來生長極低氧和碳雜質含量之矽晶片，為目前此技術的巨大挑戰。從我們過去的研究，已找到很好控氧方式，但仍無法滿足業界對極低氧和碳雜質的要求。本研究中，我們期望找到更好的CZ爐結構和生長過程條件，以有效控制氧氣和碳濃度。根據已發表的一些研究成果，我們推測採用晶堝同向旋轉和不平衡cusp磁場可能獲得較低氧含量的晶圓。本研究將使用數值模擬方法，針對晶堝轉同向旋轉及不平衡cusp磁場對流場、溫場和氧及碳雜質分佈與固液介面形狀的影響，進行深入研究。由學理的了解，提出能生產出極低氧和碳雜質的濃度矽晶圓的方法。本研究計畫將分三年進行：第一年將深入了解晶堝轉同向旋轉時，流場、溫場和氧雜質之分佈與固液介面形狀，深入了解其傳輸機制；第二年深入了解施加不平衡cusp磁場時，對流場、溫場和氧雜質分佈與固液介面形狀所產生的效益；第三年考慮碳雜質的傳輸，提出能生產出極低氧和碳雜質的濃度矽晶圓的方法。 ;In recent years, with the development of energy technology, and the development of wireless communication, wireless charging and LiDAR technology, high-power devices have become one of the most widely used semiconductor components. Up to date, silicon (Si) is still the main material for high-power devices. In order to achieve higher power density devices, the need to develop ultra-low oxygen and carbon impurities silicon wafer substrate. How to use the Czochralski (Cz) growth technology, a major commercial production method, to grow silicon crystals with extremely low levels of oxygen and carbon impurities is a huge challenge to this technology. From our previous researches, good oxygen control methods have been achieved, but it still cannot meet the requirements of extremely low oxygen and carbon impurities. In this study, we expect to find better CZ furnace structure and growth process parameters to effectively control oxygen and carbon concentrations. Based on some published research results, we speculate that the lower oxygen content in a silicon crystal may be obtained by co-rotating the crystal and crucible and applying the unbalanced cusp magnetic field. In this study, the influence of co-rotating the crystal and crucible and applying the unbalanced cusp magnetic field during the CZ crystal growth on the flow and temperature fields, the distribution of oxygen and carbon impurities and the shape of the solid-liquid interface on of the ingot was investigated by numerical simulation. Based on the present results, we can propose a CZ silicon crystal growth method which can produce ultra-low oxygen and carbon impurities concentration inside silicon wafer. This research project will be carried out in three years. In the first year, we will investigate effect of the same rotation direction of the crystal and crucible on the distribution of flow field, temperature field and oxygen impurity inside the silicon melt and the shape of the solid-liquid interface and further understand its transport mechanism. In the second year, we will study the benefits of the distribution of the flow field, the temperature field and the oxygen impurity and the shape of the solid-liquid interface when the unbalanced cusp magnetic field is applied. In the third year, the transport of carbon impurities inside the furnace is included, and the method to grow the ultra-low oxygen and carbon impurities silicon crystal is proposed.
關聯:	財團法人國家實驗研究院科技政策研究與資訊中心
显示于类别:	[機械工程學系] 研究計畫

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