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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/79455

    Title: 高功率脈衝磁控濺鍍成長透明導電膜 於可撓性塑膠基板之研究;Research of Transparent Conductive Films on the Flexible Plastic Substrates Using High Power Impulse Magnetron Sputtering
    Authors: 鄧鈞懋;DENG, JUN-MAO
    Contributors: 光電科學與工程學系
    Keywords: 透明導電膜;高功率脈衝磁控式濺鍍;可撓曲性;可靠度測試
    Date: 2018-10-19
    Issue Date: 2019-04-02 14:26:47 (UTC+8)
    Publisher: 國立中央大學
    Abstract: 可撓式基板材料為具有可連續捲對捲(roll-to-roll)生產優勢的新
    鍍成膜時的形貌影響。而 HIPIMS(高功率脈衝磁控濺鍍,high power
    impulse magnetron sputtering)是一種以高功率脈衝電源進行磁控
    均自由徑變小使薄膜產生變形,載子遷移率因而下降。;The flexible substrate material is a new generation substrate technology with the advantages of continuous roll-to-roll production. The material needs to be light, thin, not easily broken, and easy to carry and bend. The molecular structure is related to the charge conduction rate and is affected by the morphology of the film when it is sputtered by a molecule. HIPIMS (high power impulse magnetron sputtering) is a high-power pulsed power supply for magnetron sputtering, which provides a low-porosity film at low temperatures.
    In a flexible substrate, the thin film component undergoes repeated flexing, and the electrical influence of the flexographic film component is an interesting subject. In this experiment, a transparent conductive
    film ITO was prepared using a flexible plastic to study the effect of deflection on its carrier transport ability. In this study, a flexible transparent conductive film was fabricated on a plastic substrate by HIPIMS method, and the characteristics of the components under different stresses were measured. We found that when the component is bent by compressive stress, the electrical difference of the component is large,and the number of bends that can be tolerated is small. On the contrary,
    when the tensile stress is bent, the electrical difference is gentle, and the number of bends that can be tolerated is large.
    We believe that the change of the stress of the component mainly comes from the change of the intermolecular force in the film: in the tensile stress state, the average free diameter between the grains and the grains becomes large, which causes the film to have micro-cracks, which makes the carrier mobility better. On the contrary, when the element is in a compressive stress state, the average free diameter between the crystal grains and the crystal grains becomes small, and the film is deformed,and the carrier mobility is thus lowered.
    Appears in Collections:[光電科學研究所] 博碩士論文

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