English  |  正體中文  |  简体中文  |  Items with full text/Total items : 69937/69937 (100%)
Visitors : 23194569      Online Users : 749
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version

    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/79565

    Title: 探討利用射頻磁控濺鍍形成的鍺島之生長機制;The growth mechanism of Ge islands by RF magnetron sputtering systems
    Authors: 利映澤;Li, Ying-Tse
    Contributors: 照明與顯示科技研究所
    Keywords: 濺鍍;鍺島;Sputtering;Ge island
    Date: 2019-01-29
    Issue Date: 2019-04-02 15:03:02 (UTC+8)
    Publisher: 國立中央大學
    Abstract: 本論文將使用射頻磁控濺鍍進行薄膜沉積並結合後退火製程,作為主要的實驗方法。島狀形成的成因主要是利用鍺材料與矽材料之間的晶格常數差異。鍺材料在特定的生長條件下,將會由二維結構逐漸轉變為三維結構,並藉由以下變因來探討鍺島的生長機制,其中包括了後退火的方式、後退火的溫度、後退火的持溫時間、濺鍍功率以及鍺薄膜沉積在不同材料上等差異,之後並針對這些自我組裝形成的島狀結構進行拉曼光譜、原子力顯微鏡、掃描式電子顯微鏡等進行分析。
    ;In this thesis, we have used RF magnetron sputtering systems and post-annealing process as primary experiment method. The formation of Ge islands is based on the difference in lattice constants between Si and Ge. These Ge films would transform their morphology from 2-dimension to 3-dimension, by controlling the following parameters to study their growth mechanism, such as, post-annealing method, post-annealing temperature, post-annealing soaking time, the sputtering power and with or without the interlayer. Then, we have analyzed these Ge islands by Raman spectrum, atomic force microscopy (AFM) and scanning electron microscopy (SEM).
    The RF magnetron sputtering is used in this experiment because it is cheaper than other processes, such as molecular beam epitaxy, chemical vapor deposition, etc., and its raw materials are non-toxic and stable. Therefore, it will be one of the key processes in the production for the commercial applications.
    Appears in Collections:[照明與顯示科技研究所 ] 博碩士論文

    Files in This Item:

    File Description SizeFormat

    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明