English  |  正體中文  |  简体中文  |  Items with full text/Total items : 67621/67621 (100%)
Visitors : 23100375      Online Users : 281
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version

    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/80523

    Title: P型氮化硼的導電性;Electrical conductance of P-type Boron Nitride
    Authors: Nguyet, Nguyen Thi Anh;Nguyet, Nguyen Thi Anh
    Contributors: 光電科學與工程學系
    Keywords: P型氮化硼;Electrical conductance of P-type Boron Nitride
    Date: 2019-04-18
    Issue Date: 2019-09-03 14:43:12 (UTC+8)
    Publisher: 國立中央大學
    深紫外線 [Deep Ultraviolet (DUV), λ ≤ 290nm] 發光二極體 (light-emitting diode, LED) 已經在各種應用中逐漸取代傳統的紫外線光源。然而,DUV LED的外部量子效率 (external quantum efficiency, EQE) 依然難以超過10%,這主要是因為DUV LED的p型導電層為摻雜鎂 (Mg-doped) 的AlxGa1-xN,而p型AlxGa1-xN受體的活化能很高(170 mev ~ 510 meV),難以產生足夠的電洞p型氮化硼(BN高能隙(~ 6 eV),也有很低的受體活化能 (~ 31 meV),可以同時展現高穿透、高導電的特性,很適合用在DUV LED。為了研究p-BN的導電性,我們嘗試不同的金屬材料與退火條件也調整了p-BN的磊晶結構,並利用利用霍爾效應比較p-BN與p-GaN的導電性。我們發現,以低壓成長的3-nm InGaN接觸層,能有效降低p-BN界面的接觸電阻。;ENGLISH ABSTRACT
    Ultraviolet (UV) light-emitting diodes (LEDs) have replaced conventional UV light sources in various applications. Nevertheless, deep-ultraviolet light-emitting diodes (DUV LEDs, λ ≤ 290nm) are still intensively investigated because of its low EQE remaining below 10% [2]. In particular, AlGaN alloys have been the most common material for DUV LEDs. In spite of continuous efforts to develop an AlGaN DUV LED, its EQE is still typically below 10%. The limitation roots in the low conductivity of p-AlxGa1-xN as its activation energy for Mg acceptor is very high (170meV to 510meV) [6]. The high activation energy of Mg acceptor leads to low hole injection efficiency. Among many approaches have been utilized to enhance DUV LEDs’s EQE, Boron Nitride (BN) has emerged as a promising candidate to substitute p-type AlGaN in DUV LEDs. Due to its layered structure, BN has high chemical and thermal stability. Besides that, with large bandgap (~6eV), it becomes a suitable material to be used as an electron blocking layer by causing a large conduction band offset and a smaller valence band offset with other III-V materials [8,9]. The most outstanding property of BN is the dramatic reduction of Mg acceptor energy level, which can be as low as 30meV [11]. It will subsequently lower the resistivity of the p-type BN layer and also increase the hole concentration efficiency. These advantages are expected to enhance the EQE of the DUV LEDs. To investigate the electrical property of p-BN, we tried to fabricate ohmic contact on p-BN by different metallizatione schemes, annealing conditions, contact layers. The temperature-dependence Hall effect measurements are conducted to estimate the activation energy of acceptors of p-type GaN, with the attempt to attain similar results from p-BN. Our studies showed that the growth pressure of the InGaN contact layer plays an important role on the contact check resistance of the Au/Ni/p-BN interface.
    Appears in Collections:[光電科學研究所] 博碩士論文

    Files in This Item:

    File Description SizeFormat

    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明