本論文研究磷酸自組性單分子層沉積於金屬氧化層對橫向與垂直有機電晶體，並探討不同碳鏈長的自組性單分子層（SAM）對於N型小分子材料碳六十(C60)與P型小分子材料dinaphtho[2,3-b:2’,3’-f]thieno[3,2-b](DNTT)與金屬氧化層界面的影響。由橫向電晶體電性表現結果發現當SAM成長於金屬氧化層基材有助於載子遷移率(mobility)提升，其中在DDPA(C12)處理下mobility較高。進一步透過AFM結構分析，觀察表面形貌、晶粒大小以及表面粗糙度的差異。本研究再以膠體微影技術製作P型垂直電晶體，並探討在不同碳鏈長的SAM對於垂直電晶體載子的側向注入，發現開電流密度提升的趨勢與橫向電晶體的mobility相仿。;In this thesis, the organic thin film transistors(OFET) and vertical organic transistors(VFET) were fabricated with phosphonic acid self-assembled monolayer deposited on the metal oxide, and the influence of alkyl chain length on the organic semiconductor(OSC)/dielectric interface were investigated. From the results of transistor characteristics, we found that SAM grows on metal oxide contribute to enhancing the mobility .The OFET with DDPA exhibited the highest saturation mobility among the PA-SAMs. Further investigations from AFM analyse showed that the differences grain size and growth mode. This thesis applies colloidal lithography to fabricate DNTT VFET. And then we explore the lateral injection of carriers of VFET. This study found that the trend of increasing the current density is similar to mobility of the lateral transistor.
