應用於ISM與Ka頻段之射頻收發機前端電路研製; Implementation of RF Transceiver Front-End Circuits for ISM and Ka Band Applications

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題名:	應用於ISM與Ka頻段之射頻收發機前端電路研製;Implementation of RF Transceiver Front-End Circuits for ISM and Ka Band Applications
作者:	劉偉正;Wei-Cheng Liu
貢獻者:	通訊工程研究所
關鍵詞:	線性功率放大器;壓控振盪器;次諧波混頻器;低雜訊放大器;linear power amplifier;low noise amplifier;sub-harmonic mixer;voltage-controlled oscillator
日期:	2004-06-29
上傳時間:	2009-09-22 11:17:01 (UTC+8)
出版者:	國立中央大學圖書館
摘要:	隨著網際網路深入家庭，以及影音多媒體服務逐漸普及，消費市場對於網路頻寬的要求與日俱增。而手持式產品的流行，更推動了網路設備朝向無線領域發展的趨勢。射頻電路設計便是無線通訊中的一個關鍵技術，低雜訊放大器（low noise amplifier）、混頻器（mixer）、功率放大器（power amplifier）與壓控振盪器（voltage-controlled oscillator）都是其中的重要元件，這領域是一個非常具有發展性的研究主題。本論文主要研究內容為射頻前端積體電路設計，電路應用的系統為ISM頻段的無線區域網路（wireless local area networks），以及Ka頻段的區域多點分散式服務系統（local multipoint distribution service）。其中，ISM頻段的電路以TSMC 0.35μm SiGe HBT製程與GCT 2.0μm GaAs HBT研製，包含可變增益低雜訊放大器（variable gain low noise amplifier）、次諧波混頻器（sub-harmonic mixer）、線性功率放大器（linear power amplifier）與壓控振盪器設計。Ka頻段的電路則是以WIN 0.15μm pHEMT製程研製，包含低雜訊放大器、次諧波混頻器、推動放大器（driver amplifier）與功率放大器設計。 ISM頻段電路經量測，可變增益低雜訊放大器的增益為19 dB，輸入1 dB壓縮點（1 dB compression point）為-23 dBm，雜訊指數（noise figure）為2.7 dB，增益控制範圍為7.2 dB；次諧波混頻器的轉換增益（conversion gain）為2.9 dB，輸入1 dB壓縮點為-7.4 dBm，訊號隔離度（signal isolation）大於30 dB；線性功率放大器的增益為18.3 dB，輸出1 dB壓縮點為23.2 dBm，附加功率效率（power added efficiency）為29.6 %；壓控振盪器的相位雜訊（phase noise）為-90.9 dBc/Hz，輸出功率為-7 dBm，可調頻率範圍為635 MHz。 Ka頻段電路經量測，低雜訊放大器的增益為24.8 dB，輸入1 dB壓縮點為-20 dBm，雜訊指數為3.1 dB；次諧波混頻器的轉換損耗（conversion loss）為10.5 dB，輸入1 dB壓縮點為9 dBm，訊號隔離度大於30 dB；推動放大器的增益為20.4 dB，輸出1 dB壓縮點為17 dBm，附加功率效率為29.4 %；功率放大器的增益為24.4 dB，輸出1 dB壓縮點為20.9 dBm，附加功率效率為20.8 %。 Due to internet is getting to go deep into households and multi-media services are getting popular, consumption market is demanding much fast internet speed. RF circuit design is one of the key technologies of the wireless communication systems. Low noise amplifiers, mixers, power amplifiers and voltage-controlled oscillators are key components. This field is a very promising research theme. RF front-end integrated circuit design is the main research point of this paper, which apply to ISM band wireless local area network and Ka band local multipoint distribution service. Among above, ISM band circuit is implemented with TSMC 0.35μm SiGe HBT and GCT 2.0μm GaAs HBT processes, including variable gain low noise amplifier, sub-harmonic mixer, linear power amplifier and voltage-controlled oscillator designs; while Ka band circuit is implemented with WIN 0.15μm pHEMT , comprising low noise amplifier, sub-harmonic mixer, driver amplifier and power amplifier designs. The measurement results of the ISM band circuit are as follows; for the variable gain LNA , gain is 19 dB, input power at the 1-dB gain compression point is -23 dBm, noise figure is 2.7dB, gain control range is 7.2 dB; for the sub-harmonic mixer, conversion gain is 2.9dB, input power at the 1-dB gain compression point is -7.4 dBm, signal isolation is greater than 30dB; for the linear power amplifier , gain is 18.3 dB, output power at the 1-dB gain impression point is 23.2dBm, power added efficiency is 29.6%; for the voltage-controlled oscillator , phase noise is -90.9 dBc/Hz, output power is -7 dBm, tuning range is 635 MHz . The measurement results of the Ka band circuit are as follows; for the LNA , gain is 24.8 dB, input power at the 1-dB gain compression point is -20 dBm, noise figure is 3.1 dB; for the sub-harmonic mixer, conversion loss is 10.5 dB, input power at the 1-dB gain compression point is 9 dBm, signal isolation is greater than 30dB; for the driver amplifier , gain is 20.4 dB, output power at the 1-dB gain impression point is 17 dBm, power added efficiency is 29.4%; for the power amplifier , gain is 24.4 dB, output power at the 1-dB gain impression point is 20.9 dBm, power added efficiency is 20.8%.
顯示於類別:	[通訊工程研究所] 博碩士論文

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