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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/80710

    Title: Electronic and Spin Transport Properties of Fe/MgO/Fe Magnetic Tunnel Junction: Combined First-Principles Calculation and TB-NEGF Method
    Authors: 趙家加;Chao, Chia-Chia
    Contributors: 物理學系
    Keywords: 電子自旋傳輸;磁性穿隧接面;第一原理結合非平衡格林函數;自旋轉移力矩;磁電 阻式隨機存取記憶體;spin transport properties;MgO-based magnetic tunnel junctions;Combined First-Principles Calculation and TB-NEGF Method;spin torque effect;non-volatile magnetic random access memories
    Date: 2019-07-30
    Issue Date: 2019-09-03 15:00:51 (UTC+8)
    Publisher: 國立中央大學
    Abstract: 以氧化物作為穿隧阻絕層的磁性穿隧接面被廣泛的應用於磁電阻式隨機存取記憶體中。因為磁性穿隧接面透過不同的磁矩組態產生極大的穿隧磁阻值,形成磁性記憶體的最小單元,而磁矩組態可以透過外加磁場或利用自旋極化電流控制。自旋極化電流會在磁性穿隧接面中產生自旋轉移力矩,進而影響磁性材料中的磁矩方向來達成控制磁矩組態的目的。
    ;Magnetic tunnel junctions (MTJs) have aroused intensive studies for applications in non-volatile magnetic random access memories (MRAMs), which have been widely used, and the most important property of MTJs is the tunneling magnetoresistance (TMR) effect. The giant magnetoresistance (MR) ratio originates from the tunneling current depending on the relative orientation of two FM electrodes that can be controlled by a spin-polarized current via the so-called spin torque effect. The spin-transfer torque (STT) and the field-like spin torque (FLST) are two components of the spin torque effect.
    We employ the first-principles calculation with the non-equilibrium Green’s function (NEGF) method to analyze the electronic and transport properties. For Fe/MgO/Fe MTJs, the orbital symmetry of ∆_1 state in MgO-barrier is responsible for giant TMR effect that is estimated over 3000% at zero bias. Moreover, our newly developed “JunPy” package is employed to investigate both STT and FLST in non-collinear magnetic configurations, which comparable with previous experimental measurements and theoretical calculations and demonstrate the validity of “JunPy” package. These two components, STT and FLST, are responsible for the magnetization switching, which can control the magnetization configurations in MTJs. As a future work, we propose the EuO-based MTJs and expect the ∆_1 state and spin-polarized EuO-barrier may play a significant role on the enhancement for both TMR and FLST, which may create the next-generation FLST-MRAM.
    Appears in Collections:[物理研究所] 博碩士論文

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