高電流密度鰭式氮化鎵高電子遷移率電晶體研究;Design of GaN High Current Density Fin High-Electron-Mobility-Transistors

NCUIR > College of Electrical Engineering & Computer Science > Executive Master of Communication Engineering > Electronic Thesis & Dissertation > Item 987654321/80980

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Title:	高電流密度鰭式氮化鎵高電子遷移率電晶體研究;Design of GaN High Current Density Fin High-Electron-Mobility-Transistors
Authors:	陳詩文;Chen, Shih-Wun
Contributors:	通訊工程學系在職專班
Keywords:	氮化鎵;氮化鋁鎵;高電子遷移率電晶體;鰭式電晶體;高電流密度;GaN;AlGaN;HEMTs;FinFET;High Current Density
Date:	2019-08-05
Issue Date:	2019-09-03 15:23:16 (UTC+8)
Publisher:	國立中央大學
Abstract:	本實驗利用成長於碳化矽基板上的氮化鋁鎵/氮化鎵製作鰭式高電子遷移率電晶體，鰭式電晶體閘極不但擁有好的控制能力，隨著鰭狀尺寸的縮小能使元件電流密度大幅提升、降低閘極漏電以及讓閾值電壓往正向移動的特色，目前已有多篇論文研究指出，鰭式電晶體能使電晶體閾值電壓往正向移動。在蕭特基閘極鰭式電晶體元件，閘極長度與鰭狀寬度皆為2微米，在碳化矽基板上電流密度與特徵電阻為1395 mA/mm、2.4 Ω-mm。而在金氧半閘極鰭式電晶體閘極長度與鰭狀寬度一樣皆為2微米，電流密度與特徵電阻有與蕭特基閘極鰭式電晶體相比則有明顯的提升至1986 mA/mm、2 Ω-mm。另外對於變溫的量測上在室溫與100℃高溫下電流密度上僅減小約23%，與蕭特基閘極鰭式電晶體減少25%相比有些微的下降，故蕭特基閘極與金氧半閘極元件從室溫到高溫的操作並無太大差異。除了順偏特性有提升外，鰭狀結構在逆偏特性儘管部分閘極區域被蝕刻掉也不影響其特性。蕭特基閘極結構與金氧半閘極結構，閘極漏電流也由2.76 mA/mm下降至4.52 x 10-6 mA/mm，崩潰電壓由605 V提升至740 V。故本實驗可得出金氧半閘極鰭式電晶體製作於氮化鋁鎵/氮化鎵成長於碳化矽基板上不論是對元件的順偏特性或是操作於逆偏狀態下，皆比蕭特基閘極鰭式電晶體製作於氮化鋁鎵/氮化鎵成長於碳化矽基板上表現來的優異，而在高溫環境下操作對元件來說也是可行的。 ;In this study is based on the comparison of FinFET high electron mobility transistors on AlGaN/GaN fabricated on SiC substrates. The FinFET transistor gate not only has good control capability, but also shrinks with Fin size. The characteristics of the device current density can be greatly improved, the gate leakage is reduced, and the threshold voltage is moved to the positive direction. At present, many papers have pointed out that the FinFET transistor can move the threshold voltage of the transistor to the positive direction. In the Schottky gate FinFET transistor device, the gate length and the Fin width are both 2 μm, and the current density and characteristic resistance on the SiC substrate are 1395 mA/mm and 2.4 Ω-mm. The gate length of the metal oxide semiconductor gate FinFET transistor is 2 μm as well as the Fin width. The current density and characteristic resistance are significantly improved to 1986 mA/mm、2 Ω-mm compared with the Schottky gate FinFET transistor. In addition, for the measurement of temperature change, the current density at room temperature and 100 ° C high temperature is only reduced by about 23%, compared with the 25% reduction of Schottky gate FinFET transistor, so the Schottky gate is not much difference between the operation of the pole and the metal oxide semiconductor gate element from room temperature to high temperature. In addition to the improvement in the forward bias characteristics, the FinFET structure does not affect its characteristics in the reverse bias characteristic although some of the gate regions are etched away. The Schottky gate structure and the metal oxide semiconductor gate structure also reduce the gate leakage current from 2.76 mA/mm to 4.52 x 10-6 mA/mm, and the breakdown voltage is increased from 605 V to 740 V. Therefore, in this experiment, it can be concluded that the metal oxide semiconductor gate FinFET transistor is fabricated on the AlGaN/GaN grown on the SiC substrate, whether it is the forward bias characteristic of the component or the reverse bias state. The Schottky gate FinFET transistor is excellent in the growth of AlGaN/GaN on a SiC substrate, and operation in a high temperature environment is also feasible for components .
Appears in Collections:	[Executive Master of Communication Engineering] Electronic Thesis & Dissertation

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