目前生長氮化鎵薄膜以有機金屬化學氣相沉積(Metal organic chemical vapor deposition, MOCVD)及分子束磊晶(Molecular beam epitaxy, MBE)為主，有高溫以及高成本的問題，本論文將採用低成本且可以大面積製造的直流脈衝磁控濺鍍法取代有機金屬化學氣相沉積(MOCVD)與分子束磊晶(MBE)生長氮化鎵薄膜。並在製程中施加一偏壓於基板乘載盤處，成功於氮化鋁/藍寶石上成長C軸方位(0002)氮化鎵薄膜。 本研究中施加偏壓於基板承載盤處，利用基板處的正、負電荷因素會分別吸引電子和Ar離子撞擊薄膜的機制對薄膜產生不同的效益。施加正偏壓於基板可以優化薄膜的結晶品質，而施加負偏壓於基板可以使薄膜表面覆蓋的更均勻，使表面粗糙度下降。 經由X-ray繞射(XRD)和Raman光譜的量測可得知晶格結構和鍵結情況。由原子力顯微鏡(AFM)與掃描電子顯微鏡(SEM)的量測可得知表面形貌與表面粗糙情形。 最終成功以直流脈衝磁控濺鍍法製備出C軸方位(0002)的氮化鎵薄膜之表面粗糙度為0.354nm , XRD半高寬為0.241度。 ;Currently, gallium nitride thin films were mainly grown by metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE), with the disadvantages of high process temperature and high cost. In this research the sputterring method , was applied with low cost and which is low-cost and fabricating in large area.can be made in large area, to replace MOCVD and MBE growing gallium nitride thin films. The c axis(0002) gallium nitride thin films were successfully grown on the sapphire with AlN buffer layer by dc pulse magnetron sputtering with a bias applied on the substrate holder. In this study, the mechanism of the applied bias is the positive and negative bias would attract electrons and Ar+ to bombard the film , respectively. The positive applied bias on the substrate can optimize the crystallization quality of the film. And the negative applied bias on the substrate can improve the uniforming and reduce the surface roughness. The lattice structure and bonding can be determined by X-ray diffraction (XRD) measurement and Raman spectra , respectively. The surface morphology and roughness can be obtained from the measurement of atomic force microscope (AFM) and scanning electron microscope (SEM). Finally , the C axis (0002)gallium nitride thin film was successfully by dc pulse magnetron sputtering , with the root mean square roughness 0.354nm and the FWHM 0.241 degrees.