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    請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/8117


    題名: 覆晶式Ka頻段超外差發射機前端電路之研製;Implementation of Flip-Chip Superheterodyne Transmitter Front-End Circuits for Ka Band Applications
    作者: 白禮智;Li-Chih Pai
    貢獻者: 通訊工程研究所
    關鍵詞: 毫米波發射機;次諧波混頻器;功率放大器;subharmonic mixer;millimeter-wave transmitter;power amplifier
    日期: 2005-07-09
    上傳時間: 2009-09-22 11:18:35 (UTC+8)
    出版者: 國立中央大學圖書館
    摘要: 本論文主要研究內容為毫米波覆晶式射頻前端發射機電路設計,電路應用的系統為Ka頻段的區域多點分散式服務系統(local multipoint distribution service)。利用WIN 0.15μm pHEMT製程研製,包含共面波導功率放大器、寬頻功率放大器、次諧波二極體混頻器以及次諧波電阻性混頻器設計。 電路經量測,共面波導功率放大器的增益為14.5 dB,輸入輸出返回損耗分別為8dB與5.4dB,1dB壓縮點輸出功率與附加功率效率為20.4 dBm與 14.1 %,最大輸出功率與功率效率增益為22.3 dBm與 19.3 %;寬頻功率放大器頻寬為19GHz至31GHz,在頻率為27.1GHz時,增益為21.6 dB,輸入輸出返回損耗分別為10dB與4dB,1 dB壓縮點輸出功率與附加功率效率為21dBm與 18.6 %,最大輸出功率與功率效率增益為23.1 dBm與 21.9 %;次諧波二極體混頻器的轉換損耗(conversion loss)在昇頻模式中為10.5dB,輸入1dB壓縮點-3dBm;而在降頻模式中為11.1dB, 輸入1dB壓縮點為1dBm;在昇頻模式中,LO-RF隔離度在所操作的頻段中皆大於19dB,而IF-RF隔離度則大於13dB;在降頻模式中,LO-IF隔離度在所操作頻段皆大於14dB,RF-IF隔離度則大於38dB;次諧波電阻性混頻器的轉換損耗為10.4dB,輸入1dB壓縮點1dBm,LO-RF隔離度在所操作的頻段中皆大於30dB,而IF-RF隔離度則大於16dB。 Millimeter-wave flip-chip RF front-end transmitter circuits design are the main research of this thesis, which apply to Ka band local multipoint distribution service(LMDS). These Ka band circuits are implemented with WIN 0.15μm pHEMT, including coplanar waveguide power amplifier, broadband power amplifier, sub-harmonic diode and resistive mixer designs. The measured results of the circuit are illustrated as follows; for the coplanar waveguide power amplifier , gain is 14.5 dB, input and output return loss are 8dB and 5.4dB, the output power and power added efficiency at the 1-dB gain compression point are 20.4dBm and 14.1%, the maximum output power and power added efficiency are 22.3dBm and 19.3% ; for the broadband power amplifier , bandwidth is 19GHz to 31GHz, gain is 21.6 dB at 27.1GHz, input and output return loss are 10dB and 4dB, the output power and power added efficiency at the 1-dB gain compression point are 21dBm and 18.6%, the maximum output power and power added efficiency are 21.3dBm and 21.9%; for the sub-harmonic diode mixer, operating at up-converter, the conversion loss is 10.5dB, input power at the 1-dB gain compression point is -3dBm; operating at down-converter, the conversion loss is 11.1dB, input power at the 1-dB gain compression point is 1dBm; the LO-RF and IF-RF isolation are greater than 19dB and 13dB at up-converter operation, the LO-IF and RF-IF isolation are greater than 14dB and 38dB at down-converter operation; for the sub-harmonic resistive mixer, the conversion loss is 10.4 dB, input power at the 1-dB gain compression point is 1dBm, the LO-RF and IF-RF isolation are greater than 30dB and 16dB
    顯示於類別:[通訊工程研究所] 博碩士論文

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