中大機構典藏-NCU Institutional Repository-提供博碩士論文、考古題、期刊論文、研究計畫等下載:Item 987654321/82770
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 78852/78852 (100%)
造访人次 : 38646844      在线人数 : 1169
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜寻范围 查询小技巧:
  • 您可在西文检索词汇前后加上"双引号",以获取较精准的检索结果
  • 若欲以作者姓名搜寻,建议至进阶搜寻限定作者字段,可获得较完整数据
  • 进阶搜寻


    jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/82770


    题名: 超強耦合高分子發光二極體之研究;Study of polymer light-emitting diode operating in the ultrastrong coupling regime
    作者: 林煒紘;Lin, Wei-Hong
    贡献者: 光電科學與工程學系
    关键词: 偏極子;強耦合;超強耦合;Polariton;Strong coupling;Ultrastrong coupling
    日期: 2020-01-14
    上传时间: 2020-06-05 17:11:48 (UTC+8)
    出版者: 國立中央大學
    摘要: 本論文主要研究在共振激發機制下的電致發光偏極子元件,我們以高分子材料MDMO-PPV同時作為激子庫與光子源,透過共振腔式倒置型高分子發光二極體的設計,實現高分子材料的激子能量與共振腔光子模態的強耦合作用,並使電激發的光源直接激發偏極子能態發光,與一般元件相比,可以減少偏極子散射的損耗,提升元件發光效率。
    在加入電子傳輸層ZnO優化元件後,實驗得到元件的外部量子效率約為0.14 %,偏極子集中於下支低角度發光,拉比分裂能量為600 meV,耦合因子有22.9 %,屬於超強耦合的範疇。而在強弱耦合元件發光效率的比較下,推測ZnO鍍在不同膜面上的電子注入效果不同,並以單載子元件的實驗證明。
    ;In this thesis, the electrically pumped polariton device operating in the resonant pumping regime was studied. We used polymer material MDMO-PPV as both exciton reservoir and photon source. Via design of microcavity inverted polymer light-emitting diode, strong coupling between exciton energy of polymer material and photon mode of microcavity was achieved. And the electrically excited light source can directly pump the polariton energy state to emit light. In contrast to general device, it can reduce the loss of polariton scattering and improve the luminescence efficiency.
    After adding electron transport layer ZnO for optimizing the device, the experiment have shown that external quantum efficiency is 0.14% and light-emitting polaritons gather in the lower branch at low angle. Rabi splitting energy is 600 meV which corresponds to a coupling factor = 22.9 %. It reach the ultrastrong coupling regime. Comparing the luminescence efficiency of strong coupling device with weak coupling device, we guess that the electron injection capability of ZnO deposited on the different film are different and prove by experimental result of electron-only device.
    显示于类别:[光電科學研究所] 博碩士論文

    文件中的档案:

    档案 描述 大小格式浏览次数
    index.html0KbHTML189检视/开启


    在NCUIR中所有的数据项都受到原著作权保护.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 隱私權政策聲明