本研究使用乾式電漿蝕刻法於聚亞醯胺(PI)基板進行微通孔加工，預期 藉由電漿蝕刻之優異特性，並透過調控射頻功率(RF Power)、下電極功率與腔體工作壓力等關鍵參數，製備直徑小於30 μm 且蝕刻錐角(Taper angle)趨近0˚之圓形通孔，進一步以電鍍填銅應用演示蝕刻完整性，最終計算通孔蝕刻製程之製程能力指標(Cpk)，評估本製程穩定性與符合規格程度。 結果顯示，厚度25 μm 之PI 基板可於RF Power 600 W、LF Power 300W、腔體壓力8 Pa 及氧氣流量70 sccm 下蝕刻15 min.後成功穿孔，孔洞直徑約25 μm；其Taper angle 約2.6˚，最佳化參數後將腔體壓力調整至6 Pa，可於厚度50 μm 之PI 基板蝕刻36 min.後成功製備直徑25 μm 與15 μm 通孔，Taper angle 有趨近0˚之表現，其計算後Cpk 值與潛在Cp 值分別為1.164 與1.212，而通孔亦可於電鍍填充銅後保有圖樣完整性。;The study demonstrates how dry plasma etching is used for micro-through hole processing on polyimide (PI) substrates. It is expected to achieve an etched diameter less than 30 μm and an etched taper angle close to 0˚ through by adjusting RF power, lower electrode power and the chamber working pressure. Furthermore, to demonstrate the etching integrity by applying electroplated copper after etching. Finally, the process capability index of through-hole process is calculated to evaluate the stability and the degree of conformity of the process. The results show that the PI substrate with a thickness of 25 μm can be successfully perforated after etching for 15 min. The hole diameter is about 25μm; it’s taper angle is about 2.6˚. After optimizing the parameters, the PI substrate with a thickness of 50 μm can be etched with a diameter of 25μm and with a thickness 15 μm through-hole, while taper angle is even closer to 0˚. The value of Cpk is 1.164, and the through-hole can also be etched successfully and the pattern integrity is maintained after the plating and copper filling.
