Ag/BCP：ZnO NPs膜層的探討應用於雙面反式鈣鈦礦薄膜太陽能電池;Investigation of Ag/BCP: ZnO NPs films applied to the bifacial inverted perovskite thin film solar cells

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题名:	Ag/BCP：ZnO NPs膜層的探討應用於雙面反式鈣鈦礦薄膜太陽能電池;Investigation of Ag/BCP: ZnO NPs films applied to the bifacial inverted perovskite thin film solar cells
作者:	陳靜儒;Chen, Ching-Ju
贡献者:	光電科學與工程學系
关键词:	鈣鈦礦;鈣鈦礦太陽能電池;薄膜
日期:	2020-08-18
上传时间:	2020-09-02 15:44:33 (UTC+8)
出版者:	國立中央大學
摘要:	鈣鈦礦薄膜太陽能電池在近幾年期間，光電轉換效率急速上升地來到 25.2 %，不過成長幅度隨著單一接面限制也日漸趨緩，全球的科學家利用堆疊型鈣鈦礦薄膜太陽能電池以突破光電轉換效率，此類型是以高能隙太陽能電池(鈣鈦礦薄膜太陽能電池)堆疊於低能隙太陽能電池(矽基太陽能電池)，分別吸收不同波段的太陽光，因此製備出半透明鈣鈦礦薄膜太陽能電池是實現堆疊型鈣鈦礦/矽薄膜太陽能電池的先前工作。本論文採用半透明雙面鈣鈦礦薄膜太陽能電池的架構為: AZO/Ag/BCP: ZnO NPs/PC61BM/CH3NH3PbI3/PEDOT:PSS/ITO/glass。透明導電的鋁摻雜之氧化鋅(Al-doped ZnO, AZO)薄膜為陰極、氧化銦錫 (ITO)薄膜為陽極;奈米級 Ag 為緩衝層; Bathocuproine: ZnO nanoparticles (BCP: ZnO NPs)為緩衝層兼電子傳輸層; phenyl-C61-butyric acid methyl ester (PC61BM) 為電子傳輸層、 poly(3,4- ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS)為電洞傳輸層; CH3NH3PbI3 則是元件的吸光層。透過 BCP: ZnO NPs 製程參數的調控、Ag 厚度與蒸鍍鍍率的改變、濺鍍 AZO 功率與膜層厚度的挑選，製備出的半透明雙面鈣鈦礦薄膜太陽能電池當太陽光由 ITO 面照射太陽能電池，元件最高的功率轉換效率（power conversion efficiency, PCE）可達 11.08 %，此元件的短路電 ii 流密度（short-circuit current density, JSC）為 21.30 mA / cm2、開路電壓（open-circuit voltage, VOC）為 0.89 V 和填充係數（fill factor, FF）為 57.46 %；當太陽光由 AZO 面照射太陽能電池，元件最高的功率轉換效率（power conversion efficiency, PCE）可達 5.40 %，此元件的短路電流密度（short-circuit current density, JSC）為 9.33 mA / cm2、開路電壓（opencircuit voltage, VOC）為 0.88 V 和填充係數（fill factor, FF）為 64.6 % 最後，透過分析光強度相依的電流密度-電壓曲線，證實了鈣鈦礦薄膜的電洞傳遞的性質優於電子傳遞的性質。此特性的理解有助於將來實現高效率的雙面鈣鈦礦薄膜太陽能電池元件。;The power conversion efficiency (PCE) of perovskite thin film solar cells have increased rapidly to 25.2 %. However, the increment in the PCE is getting slower for the limitation of the single junction. To increase the PCE, the perovskite/inorganic tandem configuration has been proposed. In the tandem solar cell, the large bandgap perovskite solar cell has to be fabricated on the low bandgap inorganic solar cell. Therefore, an efficient semitransparent perovskite thin film solar cell has to be developed in advance. In this research, the architecture of the semi-transparent bifacial perovskite thin film solar cell is: Al-doped ZnO/Ag/BCP: ZnO NPs/PC61BM/CH3NH3PbI3/PEDOT:PSS/ITO/glass. Al-doped ZnO (AZO) and ITO are used as the cathode and the anode, respectively. PCBM and PEDOT:PSS are used as the electron transport layer (ETL) and the hole transport layer (HTL), respectively. CH3NH3PbI3 thin film is used as the light absorbed material (LAM). Ag/BCP: ZnO NPs is used as the buffer layer and ETL modified layer. After the optimization process, the highest PCE of the bifacial perovskite thin film solar cell is 11.08% when the device is illuminated from the ITO side, the short-circuit current density (JSC) is 21.30 mA/cm2 , the open-circuit voltage (VOC) is 0.89 V and the fill factor (FF) is 57.46 %. The highest PCE of the bifacial perovskite thin film solar cell is 5.40 % when the device is illuminated from the AZO side, the JSC is 9.33 mA/cm2 , VOC is 0.88 V and FF is 64.6 %. Finally, from the light intensity-dependent FF of the bifacial perovskite solar cell show that the hole mobility is higher than the electron mobility in the CH3NH3PbI3 thin film.
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