| 摘要: | 在這篇學位論文是為了免去光學微影製程，雖然使用光學曝光 時間短，但是在設計需要改變設計時需要重新設計光罩，且在轉 換成使用電子束曝光小結構後，還需要將原先大結構的金屬表面做 清潔再製作小結構的部分。而使用全電子束微影製程技術時，在大 結構的設計需要修改時，可以直接從設計圖修改，讓製程及理解物 理上可以更有效率。使用全電子束微影製程的共平面波導共振器的 結構為λ/4的共振器，且共平面波導的結構為Al − AlOx − Al，而製 作出來的Internal quality fator Qi分為(147443, 151580, 131220)、 (157687, 114718, 71185)。第一片為XQ-SA-09-1的三個共平面波 導共振器，第二片為XQ-SA-09-7，這三個共平面波導共振器分別 為5.5GHz、6.0GHz、 6.5GHz。分別在XQ-SA-09-1的第三個共振腔 以及XQ-SA-09-7的第一個共振器看到共振器的頻率與超導人造原 子的訊號耦合出現在Dispersive regime。再利用傑尼斯-卡明斯模型 (Jaynes-Cummings model)得到Qubit與共振器的耦合強度在XQ- SA-09-1的第三個共振器為g = 29.3MHz、XQ-SA-09-7的第一個共振 器為g = 26.0MHZ，透過觀察到Qubit的第二激發態計算出Qubit的充 電能為EC = 220MHz。在時域上的量測觀測到拉比震盪以及Qubit的 能量鬆弛時間T 1 ≃ 1.03μs。;This thesis is a new way to fabricate on-chip circuit qauntum elec- trodynamic(cQED) system. Typical process is seperatelly fabricating coplanar waveguide resonator and superconducting artificial atom, which we only interest the lowest two level, a.k.a. qubit. Coplanar waveguide resonators are fabricated by photolithgraphy and qubits are fabricated by electron beam lithography. Here we use full electron beam lithgraphy to construct our device. Means that, resonator and qubits are fabricated simultaneously. The type of the resonator we use is λ/4, and the struc- ture is Al − AlOx − Al. But this do not affect our internal quality factor Qi which can reach (147443, 151580, 131220), (157687, 114718, 71185), these two data respectively three resonators with 5.5, 6, 6.5GHz on the two different devices. Here we also observed power dependent dis- persive shift of two of the resonators. Fitted by the Jaynes-Cummings model, then we get the coupling strength between resonators and qubits, 29.3,26.0MHz. The second excited state of Xmon Qubit is observed and the charging energy EC = 220MHz is then determined. In the time domain measurement, Rabi oscillation and T1 energy relaxation time T 1 ≃ 1.03μs is also observed and determined. |
