邁向更精準與多元的二維材料的成長與操控;Towards a More Precise and Diverse Control on the Growth and Manipulation of Two Dimensional Materials

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/84678

Title:	邁向更精準與多元的二維材料的成長與操控;Towards a More Precise and Diverse Control on the Growth and Manipulation of Two Dimensional Materials
Authors:	溫偉源;蘇清源
Contributors:	物理學系
Keywords:	二維材料;石墨烯;化學氣相沉積;缺陷;離子佈植;掃描探針微影;雙光子氧化;光電子能譜;拉曼光譜;調製光譜;2D materials;graphene;chemical vapor deposition;defects;ion implantation;scanning probe lithography;two-photon oxidation;photoelectron spectroscopy;Raman spectroscopy;Photluminescence sepctroscopy
Date:	2020-12-08
Issue Date:	2020-12-09 10:40:53 (UTC+8)
Publisher:	科技部
Abstract:	在本計畫中，我們規劃發展進一步更精準的二維材料成長與性質操縱的方法並探討其中的物理。首先我們計畫透過基板表面處理與內部缺陷清理來調控石墨烯化學氣相沉積的結核數與成長速度使其形成大面積局部多層石墨烯，並利用電漿清理形成銅基板兩面覆蓋率差異導致碳原子被濃度梯度所驅使形成於高覆蓋率石墨烯之銅表面上與第一層石墨烯中間長成更大覆蓋率且具非平衡錯排夾角之雙層石墨烯。另外我們將建造新一代磁控低損傷電漿輔助化學氣相沉積系統成長更低溫但更低缺陷之石墨烯並研究其成長動力學。另外我們將利用電漿輔助分解成長六方氮化硼並研究其成長機制、利用離子佈植於過度金屬薄膜所覆蓋之半導體基板上形成多層二維過渡金屬硫屬化合物。上述研究可以幫助進一步了解缺陷在二維材料成長的物理機制並對實現二維材料量產的進展做出貢獻。在二維材料成長完成，我們計畫利用原子力顯微鏡在二維材料上進行掃描探針微影達到局部結構與化學變化形成奈米缺陷結構、利用雙光子氧化與光子鍛造對二維材料進行表面改質、利用離子佈植在二維材料上形成摻雜缺陷或結構性破壞、利用電漿表面處理在二維材料上形成官能基進行能隙調控，並持續以顯微拉曼光譜、顯微調制光譜、原子力顯微技術、同步輻射x光光源等方法研究二維材料中的結構、激子動力、化學鍵結等性質。在本計畫中我們也計劃建構與精進一些量測技術以致對所產生的缺陷有更好的物理理解。其中我們將建構一套新的二維拉曼與調製光譜系統平台與添購原子力表面功函數量測模組。 ;Within the scope of this proposal, we plan to develop more precise ways to grow and manipulate the two dimensional materials of interest and study the underlying physics. First we plan to grow large grain twisted bilayer-graphene through manipulating the concentration gradient of carbon sources in the bulk catalyst. The ultimate goal is to precisely control the twist angle of the bilayer-graphene and understand the mechanism behind the generation of non-equilibrium twist angle. Second we plan to build a new generation low damage magnetron plasma enhanced chemical vapor deposition system to enable fast, lower temperature, and defect free graphene growth, and study the nucleation and growth dynamics. Third we will implement an inductive coupled plasma coil to effectively ionize the ammonia borane source in the growth process of hexagonal boron nitride. Fourth we will continue to grow multi-layered transition metal dichalcogenide film on metal film deposited semiconductor substrates through ion implantation of selenium or sulfur ions. The above study will advance our understanding in the role of defects in precise growth of 2D materials and contribute t the mass production of 2D materials in industrial applications.After the growth of the 2D materials, we will use scanning probe lithography or two photon oxidation/forging techniques to create local defects, use ion implantation to create uniform structural or doping defects, use plasma treatment to modify or dope the surface of the 2D materials.We will characterize the structure, excitonic dynamics, chemical bonding, and surface morphology of the treated 2D materials. In order to achieve the above goals, we will purchase and implement a new confocal micro-Raman/PL system, upgrade the existing AFM system to implement the Kelvin probe force microscopy capability.
Relation:	財團法人國家實驗研究院科技政策研究與資訊中心
Appears in Collections:	[Department of Physics] Research Project

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