本論文可分為有機場效電晶體 (OTFTs)與電洞傳輸層 (HTL)材料之開發。於 p-type 有機場效電晶體材料的開發部分，延續實驗室之前開發具硫醚鏈?吩的研究，參考實驗室之前開發之高效能 OFET 小分子 DDTT-SBT-14，將其硫醚鏈改由氧醚鏈替代，末端仍以三併環?吩封端而成，開發出DDTT-OBT-14 (1)。於 n-type 有機場效電晶體材料開發的部分，以雙併?吩 (TT)或含氮雜環 (TTz)為核心，將其延伸共軛長度，於兩端接上具硫醚鏈之?吩，以此四環核心製備出兩個新型?型材料DST-TTQ-b16 (2)與DST-TTzQ-b16 (3)。 最後，在電洞傳輸層材料的開發部分，製備出以 DTDST 單元為核心，兩側外掛 TPA 推電子基團之小分子材料DTDST-6-2D (4)與DTDST-6-4D (5)，此兩材料可應用於鈣鈦礦太陽能電池，目前元件效能測試中。 ;A series of new organic optoelectronic materials were synthesized and characterized for Organic Field-Effect Transistors (OFETs) and Perovskite Solar Cells (PSCs) applications. 3,3′-bis(tetradecyloxy)-2,2′-bithiophene (OBT)-based new organic semiconductor DDTT-OBT-14 (1) end-capped with dithienothiophene (DTT) units was synthesized and characterized for p-type OFETs. 2-Hexyldecyl substituted thienothiophene (TT) and thiazolothiazole (TTz)-based quinoidal compounds, DST-TTQ-b16 (2) and DST-TTzQ-b16 (3), were prepared and characterized for n-type OFETs. Two new thioalkylated terthiophene (DTDST)-based hole transporting materials, DTDST-6-2D (4) and DTDST-6-4D (5), were developed for PSCs. The optical and electrochemical properties (HOMO and LUMO) of these new materials were characterized by UV-vis and DPV. Thermal properties were investigated by DSC and TGA. Further, device characterization studies for these newly synthesized compounds are under optimization.
