近年來，可穿戴電子裝置受到很多人的關注，因此研究並開發可撓曲或可拉伸電子元件對於滿足這樣的未來需求是目前很重要的課題之一。本篇論文使用一種新型態設計的聚苯乙烯-b-聚(3-己基?吩)嵌段高分子，不同於傳統的合成方法，本篇論文所使用的半導體是利用金屬配位超分子的方法來合成的嵌段高分子，而這樣的合成方法可以大大的縮短合成聚合的時間。使用嵌段高分子製備電晶體元件的性能表現與使用聚(3-己基?吩)的性能表現是相當的，其遷移率皆為10^?2 cm^2 V^?1 s^?1左右。此外，也利用原子力顯微鏡及二維-低掠角廣角繞射儀分別分析薄膜的表面形貌及微結構。在應力-應變測試中，可發現嵌段高分子相比聚(3-己基?吩)有更好的可拉伸性質，這樣的結果可以說明含有金屬配位鍵的新型嵌段高分子是具有實用性的，也透過此研究證明這種分子設計對於未來應用於可穿戴式電子裝置是有潛力的。;Recently, wearable electronics have been drawn numerous interests. It is crucial important to develop flexible or stretchable devices to satisfy the future demands. Here, a newly designed polystyrene-block-poly(3-hexylthiophene) (PS-b-P3HT) block copolymer was presented. Instead of the traditional synthetic methods, the supramolecular methodology was utilized to construct a novel type of diblock copolymer, which could shorten the synthesis time. The PS-b-P3HT-based thin film transistors showed comparable electrical performance to P3HT-based ones, with mobility up to 10^?2 cm^2 V^?1 s^?1. Furthermore, atomic force microscopy (AFM) and 2D grazing incidence X-ray diffraction (2D-GIXD) analysis were conducted to deeply look into surface morphology and molecular orientation, respectively. The block copolymer thin films also demonstrated better stretchability contrasted with pristine P3HT thin films during stress-strain test. The results revealed the practicality of this unique block copolymer containing metal-ligand coordination and the potential in future wearable electronics applications.
