本實驗結合貴金屬催化蝕刻法及鹼性蝕刻法，在低成本的條件下，快速製備出超薄型可撓曲式矽晶元件，除此之外，更進一步的利用自組裝奈米球微影術結合光輔助電化學蝕刻法製備出大面積且尺寸可調控之矽單晶奈米孔洞通道結構陣列，此結構顯示出於可見光波段具有高的光吸收能力，並額外再透過無電鍍沉積法成功還原銀奈米金屬顆粒於奈米結構內部以及表面，使其可產生表面電漿共振之效應，以拓展光吸收之範圍至近紅外光波段。在元件的製程中，本實驗首先於較厚之矽晶基材上開發出具良好光感測性能之元件，電極的製備使用高真空濺鍍系統於試片背面鍍製鋁金屬薄膜作為歐姆接觸之電極，而正面電極則依靠無電鍍沉積法所還原之銀奈米顆粒做為蕭基接觸之電極。以940 nm近紅外光照射銀/矽蕭基接面結構光感測器並量測其光響應度、靈敏度及響應時間，最後再將具有最優異性質之元件製備條件直接與可撓曲矽單晶基材整合。;This experiment combines the noble metal catalytic etching method and the alkaline etching method to quickly fabricate ultra-thin flexible silicon crystal components under low-cost conditions. In addition, further use of self-assembled nanosphere lithography combined with photo-assisted electrochemical etching, a large-area and adjustable-size silicon single-crystal nano-hole channel structure array is prepared. This structure shows that it has high light absorption capacity in the visible light band, and is additionally successfully deposited by electroless deposition. Reduce the silver nano metal particles inside and on the surface of the nano structure, so that it can produce the effect of surface plasmon resonance to expand the range of light absorption to the near-infrared light band. In the manufacturing process of the device, this experiment first developed a device with good light sensing performance on a thicker silicon crystal substrate. The preparation of the electrode used a high vacuum sputtering system to deposit an aluminum metal film on the back of the test piece as the ohmic contact. The electrode, and the front electrode relies on the silver nano particles reduced by the electroless deposition method as the electrode of the Schottky contact. The silver/silicon Schottky junction structure light sensor was irradiated with 940 nm near-infrared light and its light responsivity, sensitivity and response time were measured. Finally, the preparation conditions of the most excellent device were directly matched with the flexible silicon unit. Crystal substrate integration.
