本研究利用CO2雷射系統對經由磁控濺鍍沉積於玻璃基板之FTO透明導電氧化物薄膜進行後退火處理，相較於傳統爐管退火製程，其具備製程簡易、節省時間成本、不受限於材料形狀及大小、可圖案化等優勢。實驗藉由調控不同雷射加工參數，包括工作週期、掃描次數及掃描速度來對FTO薄膜進行退火，並分析其對於薄膜表面形貌、結構、電性、可見光區平均透光率及能隙的影響。實驗結果得知，當雷射退火製程參數在工作週期12%、掃描次數1次及掃描速度為300 cm/s時可得到較佳退火結果，其載子濃度可從3.44×1019 cm-3升至1.35×1021 cm-3，片電則從3.2 kΩ降至0.41 kΩ，能隙則從3.832 eV寬化至4.025 eV，可見光區(390-780 nm)平均光穿透率也從88.6%提升至91.50%。從雷射退火後FTO薄膜光電特性的變化可知CO2雷射退火製程為有效且符合時間成本的薄膜熱退火製程，同時具備極大的潛力應用於其他不同種類之TCO材料上。;In this study, a CO2 laser system was used to anneal the FTO transparent conductive oxide film deposited on the glass substrate by magnetron sputtering. Compared with the traditional furnace annealing process, it has the advantages of simple process, lower the cost, is not limited to the shape and size of the materials and the film can be patterned. In our experiment, the FTO film was anneal by adjusting different laser parameters, including the duty cycle, the scan times and the scan speed. And then the surface morphology, structure, electrical properties, average transmittance in visible region and band gap of film were discussed. The results show that the best annealing process can be obtained when the laser annealing process parameters are 12% of the duty cycle, the scan times is 1 and the scan speed is 300 cm/s, the carrier concentration was varied from 3.44×1019 cm-3 to 1.35×1021 cm-3, the sheet resistance was decreased from 3.2 kΩ to 0.41 kΩ, the band gap was widened from 3.832 eV to 4.025 eV and the average transmittance in the visible region was (390-780 nm) also increased from 88.6% to 91.50%. From the changes in the optical and electrical properties of FTO films after laser annealing, it can be confirmed that the CO2 laser annealing process is an effective and cheap thermal annealing process and also has great potential to be applied to other different types of TCO materials.
