近年來半導體產業的快速發展對線寬的要求越來越小，原子層沉積法因具有極佳的均勻性和保形性，應用領域也越來越廣泛。 本論文利用稜鏡浸潤式干涉微影系統製作出週期為0.405 μm光柵波導結構，並成功利用電將輔助原子層沉積法在製程溫度60 ℃下，沉積0.03 μm HfO2薄膜於光阻光柵結構上。 利用Rsoft DiffracMOD分析二氧化鉿(HfO2)薄膜於波導模態共振結構之光譜變化。在加入HfO2薄膜後，光柵層的等效折射率增加，使共振點的轉移至光柵層中，TE模態共振點的消光比從原本的3727增加到36943。 並藉由TE及TM共振點位移量的不同，模擬出多模態非偏振濾波效果，同一階模態共振點的TE及TM波長差僅小於0.5 nm ，穿透率皆小於1%，在線寬表現上FWHM皆低於0.02 μm。 ;In recent years, the rapid development of the semiconductor industry require as small as for line width. Because of its excellent uniformity and shape retention, Atomic Layer Deposition technology has developed rapidly and has more and more applications. In this thesis, a grating waveguide structure with a period of 0.405 μm was fabricated using the immersion interference lithography system, and a 0.03 μm HfO2 film was deposited on the photoresist grating structure by using the Plasma Enhanced Atomic Layer Deposition method at a process temperature of 60 ℃. Use Rsoft DiffracMOD to analyze the spectral changes of the hafnium dioxide (HfO2) film in the waveguide mode resonance structure. After adding the HfO2 film, the equivalent refractive index of the grating layer increases, so that the resonance point is transferred to the grating layer, and the extinction ratio of the TE mode resonance point is increased from 3727 to 36943. And by the difference of TE and TM resonance point displacements, the multi-modal non-polarization filtering effect is simulated. The TE and TM wavelength difference of the same order modal resonance point is only less than 0.5 nm, the transmittance is less than 1%, and the line width In terms of performance, the FWHM is lower than 0.02 μm.
