碳化矽本身有著相當穩定的化學性質，因此在室溫環境下幾乎不與任何物質反應，而一般化學蝕刻都必須要在高溫的環境下進行，造成製造成本的增加。本實驗在室溫下對碳化矽(4H-SiC)進行電化學蝕刻，透過氫氟酸(HF)與酒精(C2H5OH)體積比1：1的蝕刻液進行蝕刻，在相同蝕刻時間下使用300mA、400mA、500mA等不同電流，在蝕刻過程皆觀察到電壓的瞬間上升，蝕刻區域因側切現象產生分層並產生薄膜，本研究為觀察不同電流下的蝕刻速率差異與蝕刻後所產生之薄膜的關係。並藉由穿透式與掃描式電子顯微鏡(TEM & SEM)觀察薄膜與蝕刻後試片的顯微結構，以及使用X射線衍射儀(XRD)、拉曼光譜儀(Raman)與能量色散X射線光譜(EDS)觀察薄膜元素成分與晶體結構，最後使用原子力顯微鏡(AFM)掃描蝕刻後的薄膜與原試片表面粗糙度的差異性。實驗結果得出隨著電流上升，薄膜產生的時間縮短與薄膜厚度增加，表示碳化矽基板的厚度隨著電流增加在較短的時間內達到減薄的現象。;Silicon carbide, with stable chemical properties, will not react with almost any substance at room temperature, whereas chemical etching is usually performed at high temperature, which increases the manufacturing cost. In this experiment, electrochemical etching of silicon carbide (4H-SiC) was carried out at room temperature with an etching solution of hydrofluoric acid (HF) and alcohol (C2H5OH) with a volume ratio of 1:1. In this study, we observed the relationship between the difference in etching rate at different currents and the films produced after etching. The relationship between the etched films and the etched films was observed by Transmission and scanning electron microscopy (TEM & SEM), and by X-ray diffraction (XRD), Raman spectroscopy (Raman) and energy dispersive X-ray spectroscopy (EDS). The difference in roughness between the etched film and the original specimen was scanned by AFM. The results showed that as the current increased, the film generation time shortened and the thickness of film increased, which indicate that the thickness of the silicon carbide substrate thinned in a relatively short period of time as the current increased.
