本論文主要研究利用phenyl-substituted poly(p-phenylene vinylene), Ph-PPV)又稱Super Yellow來製作超強耦合垂直有機發光電晶體(Vertical Organic Light-Emitting Transistor, VOLET)並研究其物理現象。理論上，當光子與材料激發態(激子)在共振腔中進行強耦合作用，則產生偏極子(polariton)混成態和不同的能量色散分支，而拉比分裂為上下支色散曲線的最小能量差，當拉比分裂超過激子能量的20 %以上則為超強耦合狀態。 在元件製作上，我們以共振腔式倒置型高分子垂直發光電晶體的架構設計元件，依序以厚銀膜當作及閘極及下反射鏡，接著利用原子層沉積(ALD)沉積三氧化二鋁及氧化鉿作為高介電係數介電層，N型材料氧化鋅作為半導體層，其上再堆疊OLED，而OLED陽極為薄銀，作為垂直電晶體汲極及共振腔上反射鏡。 最終實驗得出偏極子電晶體的外部量子效率為1.6 %，最高亮度為1200 cd/m2，而發光集中於偏極子下支低角度，並證實拉比分裂為720 meV(耦合強度為25.8 %)的超強耦合垂直發光電晶體元件。 ;This thesis explore phenyl-substituted poly(p-phenylene vinylene), (Ph-PPV), or called Super Yellow, as the emissive layer of ultra-strongly coupled vertical organic light-emitting transistor (VOLET) and studies the physics phenomena. In theory, strong coupling of exciton and photon in the cavity would form hybrid polariton states and different energy dispersions of upper (UPB) and lower (LPB) polariton branches. The minimum energy difference between two branches is called Rabi-splitting energy. The ultra-strong coupling regime is reached when the Rabi-splitting energy exceeds 20 % of exciton energy,. In the device fabrication, we design the microcavity of an inverted vertical light-emitting transistor, a thick silver film is used as the gate and bottom mirror. The atomic layer deposition (ALD) is employed to deposit the aluminum oxide and hafnium oxide as a double dielectric layer with high dielectric constant and N-type ZnO as the transistor channel. Finally, an inverted OLED is deposited on the ZnO layer, and a thin silver film is used as the drain and top mirror. Finally, we demonstrate the polartion transistor with the external quantum efficiency of 1.5 %, and luminance of 2600 cd/m2. The emission is generated from the lower polariton branch at low angles, and the Rabi-splitting energy of 720 meV (coupling ratio of 25.8 %) demonstrates the ultrastrong coupling operation.
