由於N 型矽的主要載流子是電子，施加電場後飄移速率為電洞三倍，因此經過陽極氧化產生量子侷限的奈米結構後非常適合製作矽光子元件。但由於N 型矽基板缺乏陽極氧化的要素¬—電洞，製作多孔矽極為困難，因此藉由疏水性晶圓鍵合技術將P 型矽作為中介電極，在N 型矽背面形成可拆卸式的PN 接面後再接電極，這將轉換N 型矽中的電洞流成主控電流，提高基板表面陽極氧化效率，製程結束後作為中介電極的P 型矽能輕易移除，使處理後的N 型矽保持乾淨且無污染。 本研究使用氫氟酸:酒精比例1:1，以固定電流500 mA進行電化學蝕刻30分鐘，並使用場發射掃描式電子顯微鏡(SEM)、穿透式電子顯微鏡(TEM)、光致發光光譜儀(PL)做進一步分析，以不同摻雜濃度的P型矽晶圓輔助N型矽晶圓進行蝕刻，後續觀察N型矽晶圓所生成多孔矽之影響。 ;Since the main carriers of N-type silicon are electrons, and the drift rate is three times that of holes after applying an electric field, it is very suitable for the fabrication of silicon photonic devices after anodizing to produce quantum-confined nanostructures. However, due to the lack of anodes on N-type silicon substrates The element of oxidation—holes, is difficult to make porous silicon. Therefore, the hydrophobic wafer bonding technology uses the P-type silicon as the intermediate electrode. The detachable PN junction is formed on the back of the N-type silicon, and then the electrode is connected. This will convert the holes in the N-type silicon to flow into the main control current, improve the efficiency of anodization on the substrate surface, and the P-type silicon as an intermediary electrode can be easily removed after the process, keeping the processed N-type silicon clean and free of contamination. In this study, electrochemical etching was performed at a fixed current of 500 mA for 30 min using a hydrofluoric acid: alcohol ratio of 1:1, and field emission scanning electron microscopy (SEM), transmission electron microscopy (TEM), photoluminescence spectrometer (PL) For further analysis, P-type silicon wafers with different doping concentrations were used to assist N-type silicon wafers for etching, and the effect of porous silicon generated by N-type silicon wafers was subsequently observed.
