本研究提出一種應用勞倫茲力來感測磁場之電容式磁場感測器，利用 台灣半導體研究中心提供之 UMC 0.18 μm 1P6M CMOS 製程提高元件之良 率，建構出機械結構以及電容讀取電路，透過激發電流與待測磁場產生勞 倫茲力帶動感測電極間距的改變，最後再配合電容讀取電路進行磁場的量 測。在元件的設計上，我們結合兩種不同之感測電極結構，使感測電容能 針對結構之同平面及出平面運動進行量測，藉此完成三軸之磁場量測。最 後，我們將磁場感測器應用在電流量測中，藉由電流導線會在其周圍產生 磁場之特性成功對電流大小進行量測。;This research proposes a Lorentz force based capacitive magnetic sensor. The sensor’s mechanical structure and circuit was implemented using the standard UMC 0.18 m 1P6M CMOS process. The Lorentz force generated by the excitation current and magnetic field would change the gap between the sensing electrodes so that we could measure the magnetic field by the readout circuit. By integrating two different capacitance structures, this design could respectively sense out-of-plane and in-plane motion so that we could measure three-axis magnetic field. Finally, we could take this sensor as a current sensor by measuring the magnetic field generated from the current.
