DNA 檢測是一項關鍵的生物技術，用於檢測個體間的遺傳差異。 本研究在 Si 基板上成長 AlGaN/GaN/BN，得到高濃度的二維電洞氣 (two dimensional hole gas, 2DHG)，並以此測試 DNA 的感測效能。 使用 Si 基板和不同材料(AlGaN、BN..)製成的半導體元件具有以 下優點，Si 成本低、且與成熟的 CMOS 技術相容，極具商業價值。 其次，透過選擇不同的材料堆疊，可以調節元件的能隙和界面特性， 進一步優化其檢測性能。此外，使用電壓和電流差異檢測 DNA 差異 可簡化實驗流程，並提供快速、高效的檢測結果。 然而，在未來的研究中需要克服以下問題，需要進一步研究不同材 料堆疊對檢測性能的影響，以找到最佳組合並最大程度地提高靈敏度 和準確性。其次，需要解決樣本前處理、干擾和檢測靈敏度等方面的 挑戰，特別是在高濃度 DNA 樣本的檢測中。最後，需要開展更深入 的研究，以確定電壓和電流差異與 DNA 差異之間的關聯性，並進一 步改進檢測的準確性和可靠性。總的來說，使用 Si 基板和不同材料 堆疊的半導體元件以電壓和電流差異檢測 DNA 差異具有優越的靈敏 度、調控性和高效性。未來的研究應該集中在克服上述挑戰，以推動 這一 DNA 檢測方式進一步發展。 ;DNA testing is a crucial biotechnology used to detect genetic differences between individuals. This study investigates the feasibility of DNA testing by the two dimensional hole gas (2DHG) formed by AlGaN/GaN/BN grown on Si substrates. The semiconductor devices fabricated on Si substrates with different materials (AlGaN, BN, etc.) offer several advantages. Si is cost effective and compatible with the mature CMOS technology, being suitable for commercialization. Furthermore, by selecting different material stackings, the device′s bandgap and interface properties can be adjusted to further optimize its detection performance. Additionally, detecting DNA differences through voltage and current variations simplifies the experimental process and provides rapid and efficient results. However, several challenges need to be addressed in future research. It is necessary to further investigate the impact of different material stackings on detection performance to identify the optimal combination and maximize sensitivity and accuracy. Furthermore, challenges related to sample preparation, interference, and detection sensitivity need to be addressed, particularly in the detection of high-concentration DNA samples. Finally, more in-depth research is needed to determine the correlation between voltage and current variations and DNA differences.
