隨著科技的發展促使消費性電子產品微縮，且產品需要高功能低損耗，為了達 成上述需求，需要突破在半導體上的物理極限，因此二維材料的發展備受關注，而 sp2 鍵結六方氮化硼是其中擁有寬能隙的二維材料，且有出色的化學穩定性，而良好 的介電材料能有效降低電荷的散射，因此本研究使用低壓化學氣相沉積法於矽基板 上生長 sp2 鍵結六方氮化硼薄膜。 本研究主要是改變前驅物的引入方式，並比較兩者製程所生長的 sp 2 鍵結氮化 硼薄膜，在前驅物為非引入式製程的拉曼光譜所量測到的半高寬峰值在高溫爐管後 端的結晶品質較佳，半高寬峰值最佳約為 31 cm-1，XPS 所量測 B:N 為 1.55:1，而透 過 HR-STEM 證實為與六方氮化硼同類 sp 2 鍵結的亂層氮化硼。引入式製程所生長 的 sp2 鍵結氮化硼薄膜，拉曼光譜所量測出來的整體半高寬峰值，隨距離越遠有越 好的趨勢，半高峰值最佳也約為 31 cm-1，而透過 HR-STEM 證實在矽的表層有接近 平面的 sp2 鍵結氮化硼薄膜，XPS 所量測出的 B:N 比從 1.55:1 下降至 1.21:1，兩個 製程薄膜從 FTIR 所量測的 B-N 鍵結以及 B-N-B 鍵結強度有越來越好的趨勢，從橢 偏儀所量測出的結果，整體薄膜的折射率為引入式製程較佳，也從光譜量測以及 Tauc plot 方法中所計算出來的能隙都由引入式製程參數較佳，代表薄膜品質有變好， 而最佳能隙值為 5.76 eV。 最後本研究結論為引入式製程可以避免前驅物受到熱輻射而提早反應，且可以 控制前驅物的加熱溫度，並有效控制反應物的產生，且能藉由氣體流量大小控制薄 膜的生長，而使整體薄膜品質變好。;As the development of technology, consumer electronics continue to shrink with high performance and low power consumption. In order to achieve the above requirements, it is necessary to exceed the physical limits of semiconductors. Therefore the development of 2D materials has attracted great attention, especially the sp2 -bonded hexagonal boron nitride (h-BN) with a wide energy gap and excellent chemical stability. It is an excellent dielectric material and can effectively reduce the scattering of charges. In this study, lowpressure chemical vapor deposition has been applied to fabricate sp2 -bonded h-BN thin films on Si substrates. The sp2 -bonded BN thin films grown by the two different precursor injection methods. The full-width half-width maximun (FWHM) of the peaks measured by Raman spectroscopy of the BN fabricated by non-injection method showed good crystalline quality at the rear end of the high-temprerature furnace with the best peak width of about 31 cm-1 . And the B:N is 1.55:1 measured by XPS. The sp2 -bonded h-BN random layers were confirmed by HR-STEM. The FWHM of the peaks measured by Raman spectroscopy of the sp2 -bonded BN thin films grown by the injection mathod showed better crystalline quality, with the best peak width of about 31 cm-1 . It was confirmed by HR-STEM that it is a nearly planar sp2 -bonded h-BN film on the surface of Si. The B:N measured by XPS is 1.21:1. The B-N bonding and B-N-B bonding strengths as the distance in the furnace measured by FTIR of the h-BN films grown by the both process films showed an increasing trend. The refractive index measured by the ellipsometer and the energy gap calculated using Tauc-plot method show the injection method is better than the non-injection method, which means the crystalline quality of the film is better. vii Finally, this study concludes that the injection mathod can control the temperature of precursors, the production of reactants, and the gas flow to improve the crystalline quality of the sp2 -bonded h-BN thin films.
