相較於可見光LEDLED，紫外光LED 因波長更短能量更強，可以殺菌，在生醫領域有很大的應用價值。但是紫外光LED 的發光效率很低，尚未完全商業化。為了提升紫外光LED 的效率，我們希望利用表面電漿效應增加LED 的量子效率。我們在藍寶石基板上成長發光波長為( 的AlGaN 量子阱(Qu antum Well, QW) QW)，再用鋁作p 型電極，並分析量子阱和Al 之間的距離對發光效率及電性的影響。我們發現當量子阱和Al 之間的距離為50 nm p 型GaN 磊晶時間 5 分鐘 時，元件有較明顯的表面電漿效應，但是接觸電阻太大。如果將Al 下方的Ni 厚度從5 nm 增加到10 nm nm，可以降低接觸電阻、並維持表面電漿的效果。;Comparing to the LEDs with visible emission waveleng th s , ultraviolet (UV LEDs have higher photonic energy, which is promising for the disinfection in bio chemical applications. However, UV LED is of low quantum efficiencies, impeding its commercialization. In this study, we aims to improve the efficiency of UV LED by surface plasmon resonance (SPR) effect. The UV with the wavelength of 355 nm was grown on a sapphire substrate, and aluminum ( was used as the p type electrode. It is found that when the Al electrode and AlGaN quantum wells are separated by the 50 nm p GaN (growth time: 5 min), the device exhibits SPR effect but with unsatisfactory contact resistance. Increasing the nickel (Ni) thickness under Al from 5 nm to 10 nm can reduce the contact resistance on p GaN.
