六方氮化硼是一種優良的二維材料，其具有優異的導熱性、絕緣性以及寬能隙的特性。因為有二維材料中少數的高絕緣性，因此若能將高品質六方氮化硼轉印至二維半導體材料與傳統介電材料之間，就能改善懸鍵所導致的缺陷進而提升電子元件電性。 目前生長六方氮化硼薄膜大多以化學氣相沉積法於銅箔上，不過六方氮化硼的結晶品質跟銅基板的表面特性有很大的相關性，因此本研究藉由比較銅箔與濺鍍銅膜基板特性對低壓化學氣相沉積生長六方氮化硼的差異。 在本論文中分為銅箔基板以及銅膜基板兩個部分進行討論，銅箔基板部分探討退火參數對表面之影響，再探討不同前驅物量、氬氣流量、前驅物溫度以及基板是否通氫退火對六方氮化硼生長之影響。銅膜基板部分探討濺鍍參數對銅膜之影響，再探討不同藍寶石基板前處理方式對銅膜及六方氮化硼生長之影響。 最後本研究發現在相同的六方氮化硼生長條件下時，銅膜基板生長之六方氮化硼結晶比例高於銅箔生長之六方氮化硼結晶比例，表示表面平整且單晶的銅基板能提升六方氮化硼的結晶品質進而生長出高品質六方氮化硼薄膜。 ;Hexagonal boron nitride (h-BN) is an excellent two-dimensional material renowned for its exceptional thermal conductivity, insulation properties, and wide bandgap. Among the limited insulating materials of two-dimensional substances, transferring high-quality h-BN between two-dimensional semiconductor materials and traditional dielectric materials holds the potential to improve defects caused by dangling bonds, thereby enhancing the electrical performance of electronic components. Currently, the growth of h-BN thin films is mainly achieved through chemical vapor deposition on copper foils. However, the crystalline quality of h-BN is closely related to the surface properties of the copper substrate. Consequently, this study aims to investigate the differences in the low pressure chemical vapor deposition growth of h-BN by comparing copper foils with sputtered copper film substrates. The research is divided into two main sections: the copper foil substrate and the copper film substrate. In the copper foil substrate section, the study explores the influence of annealing parameters on the surface, followed by an investigation into the effects of different precursor amounts, argon flow rates, precursor temperatures, and the substrate with/without hydrogen annealing. In the copper film substrate section, the study in examines the influence of sputtering parameters on the copper film and subsequently investigates the effects of different sapphire substrate pretreatment methods on both the copper film and h-BN growth. Finally, this study concludes that under identical h-BN growth conditions, the crystalline proportion of h-BN grown on copper film substrates is higher than that grown on copper foils. This indicates that a smooth and single-crystal copper substrate can enhance the crystalline quality of h-BN, thereby facilitating the growth of high-quality h-BN thin films.
