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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/9328

    Title: 高效能矽鍺互補型電晶體之研製;Design and Fabrication of high performance SiGe Complementary MOS Transistor
    Authors: 廖偉明;Wei-Ming Liao
    Contributors: 電機工程研究所
    Keywords: 矽鍺;互補型金氧半電晶體;高效能;SiGe;CMOS;high performance
    Date: 2002-07-12
    Issue Date: 2009-09-22 11:45:30 (UTC+8)
    Publisher: 國立中央大學圖書館
    Abstract: 本論文中,我們從設計到製作,研究深次微米Si/SiGe異質結構互補型電晶體元件在高頻與低功率消耗電路上的應用。在矽鍺應用於元件結構的設計上,我們利用二維解析軟體MEDICI 做以下幾個研究方向的結構模擬:首先,將矽鍺應用於MOS通道上,在relaxed Si1-yGey 材料上成長一strained Si1-xGex 層來當作p型電洞通道與一strained Si 層來當作n型電子通道,利用其高載子遷移率可以達到高速的要求;其次,分析矽鍺材料使用於源極與汲極之Si1-zGez S/D MOS結構,藉由異質接面能帶偏移而得以改善元件短通道效應降低功率消耗;最後發展一整合的互補型金氧半電晶體結構,使同時具有高速且低功率消耗的優點。我們除了模擬分析所設計結構的電性外,亦將探討模擬時各種機制對電性分析的影響。 我們實際製作矽鍺通道結構的p型矽/矽鍺異質結構電晶體並比較其通道鍺含量的影響,利用UHVCVD沈積三種濃度的矽鍺(鍺摻雜15%、30%、grading)當作電洞通道,並為了降低製程熱預算,避免矽鍺層應力變化,採用低壓化學氣相沉積法沉積TEOS閘極氧化層。最後利用電流-電壓等各式量測方法,探討元件之電性特性。 The traits of valence band offset and enhanced carrier mobility in SiGe/Si material system have attracted a lot of attention for high-speed device applications. In this study, a two-dimensional bandgap engineering technique was performed to design a high performance 0.1 um SiGe CMOSFET. A SiGe/Si heterostructure is proposed; in which strained SiGe layers are not only designed for p-channel but also included in source/drain to form heterojunction. And strained Si layer on SiGe layer is designed for nMOS. Simulation results showed that enhanced current-drive capability and reduced short channel effects are achievable within the proposed structure, which indicates that Si1-xGex/Si CMOSFET is a great benefit for high-speed and low-power CMOS circuit applications. And our experiment measurement result also shows the SiGe channel pMOS have better drive current and low substrate swing.
    Appears in Collections:[電機工程研究所] 博碩士論文

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