半導體設備精密電源參數實驗設計-非對稱雙極脈衝DC濺鍍氮化鋁薄膜之微觀組織與機械性質最佳化分析

NCUIR > Engineering College > Graduate Institute of Mechanical Engineering > Electronic Thesis & Dissertation > Item 987654321/93816

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Title:	半導體設備精密電源參數實驗設計-非對稱雙極脈衝DC濺鍍氮化鋁薄膜之微觀組織與機械性質最佳化分析
Authors:	周威宇;Zhou, Wei-Yu
Contributors:	機械工程學系
Keywords:	反應脈衝直流磁控濺鍍;氮化鋁;脈衝參數
Date:	2023-07-27
Issue Date:	2024-09-19 17:39:59 (UTC+8)
Publisher:	國立中央大學
Abstract:	在本論文的研究中，使用了非對稱雙極脈衝直流電源在反應式磁控濺鍍系統濺鍍氮化鋁 (AlN) 薄膜，利用Box–Behnken實驗方法和反應曲面法 (Response Surface Method, RSM) 對直流脈衝參數(反向電壓、脈衝頻率和占空比)來進行實驗設計 (Design of Experiment, DOE)，以建立數學模型用於解釋自變量和應變量之間的關係。透過使用X射線衍射(X-ray diffraction, XRD)，原子力顯微鏡(Atomic Force Microscope, AFM)和超高解析場發射掃描式電子顯微鏡(Field Emission Scanning Electron Microscope, FE-SEM)來表徵氮化鋁薄膜的晶體微觀結構、取向及表面粗糙度。此外，透過電漿點火及功率升降以模擬實際製程，並採用光譜分析儀 (Optical Emission Spectroscopy, OES) 實時監測電漿體，通過電壓、電流分析其數據以測試電源之穩定性。本研究確定了用於生產高質量 AlN 薄膜之最佳化脈衝參數為50 V的反向電壓、100 kHz的脈衝頻率及81-82% 的佔空比，得到之最佳AlN(002)半高寬在0.20-0.21°之間、表面粗糙度1.76-1.92 nm之間及晶粒尺寸44.38-42.94 nm之間，並成功驗證了用於濺鍍之非對稱雙極脈衝直流電源的穩定性。;In the present study, the sputtered aluminum nitride (AlN) films were processed in a reactive pulsed DC magnetron system. We applied a total of 15 different design of experiments (DOEs) on DC pulsed parameters (reverse voltage, pulse frequency, and duty cycle) with Box–Behnken experimental method and response surface method (RSM) to establish a mathematical model by experimental data for interpreting the relationship between independent and response variables. For the characterization of AlN films on the crystal quality, microstructure, thickness, and surface roughness, X-ray diffraction (XRD), atomic force microscopy (AFM), and field emission-scanning electron microscopy (FE-SEM) were utilized. AlN films have different microstructures and surface roughness under different pulse parameters. Moreover, by simulating the actual process through plasma ignition and power ramping, and using optical emission spectroscopy (OES) to monitor the plasma in real time, the stability of the power supply was tested by analyzing the voltage and current data. This study determined the optimal pulse parameters for producing high-quality AlN films as 50 V reverse voltage, 100 kHz pulse frequency, and 81-82% duty cycle. The obtained optimal AlN(002) full width at half maximum ranged from 0.20 to 0.21°, the surface roughness ranged from 1.76 to 1.92 nm, and the grain size ranged from 44.38 to 42.94 nm, and successfully verified the stability of the pulsed DC power supply for sputtering.
Appears in Collections:	[Graduate Institute of Mechanical Engineering] Electronic Thesis & Dissertation

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