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姓名	蔡友益(Yu-Yi Tsai)  查詢紙本館藏	畢業系所	電機工程學系
論文名稱	砷化鎵增強/空乏型雙閘極高電子遷移率電晶體於微波/毫米波放大器設計 (Microwave/Millimeter-wave Amplifier Design using GaAs Enhancement/Depletion Mode Dual-Gate pHEMT)
相關論文	★ 增強型異質結構高速移導率電晶體大信號模型之建立及其在微波放大器之應用 ★ 空乏型暨增強型Metamorphic HEMT之製作與研究 ★ 增強型與空乏型砷化鋁鎵/砷化銦鎵假晶格高電子遷移率電晶體: 元件特性、模型與電路應用 ★ 氧化鋁基板上微波功率放大器之研製 ★ 氧化鋁基板上積體化微波降頻器電路之研製 ★ 順序特徵結構設計研究及其應用在特徵模子去耦合與最小特徵值靈敏度 ★ 順序特徵結構設計研究及其應用在最大強健穩定度與最小迴授增益 ★ LDMOS功率電晶體元件設計、特性分析及其模型之建立 ★ CMOS無線通訊接收端模組之設計與實現 ★ 積體化微波被動元件之研製與2.4GHz射頻電路設計 ★ 異質結構高速移導率電晶體模擬、製作與大訊號模型之建立 ★ 氧化鋁基板微波電路積體化之2.4 GHz接收端模組研製 ★ 氧化鋁基板上積體化被動元件及其微波電路設計與研製 ★ 二維至三維微波被動元件與射頻電路之設計與研製 ★ CMOS射頻無線通訊發射端電路設計 ★ 次微米金氧半場效電晶體高頻大訊號模型及應用於微波積體電路之研究
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摘要(中)	隨著無線通訊的快速發展，相關的微波元件以及微波電路日趨重要。本論文主要討論雙閘極E/D-Mode pHEMT應用在射頻電路放大器的應用，由於雙閘極E/D-Mode pHEMT具有高fmax的特性以及製程上成本的優勢，目標是希望利用0.5 μm 雙閘極E/D-Mode pHEMT 實現0.15 μm pHEMT製程所製作的電路特性。 第一章為整篇論文的導論，第二章分析雙閘極E/E 和E/D-Mode pHEMT元件的直流、高頻和功率等特性，以及利用實際的電路驗證雙閘極E/E 和E/D-Mode pHEMT元件應用在實際電路上的可行性；元件量測上，利用HP IC-CAP軟體，配合HP-4142B直流分析儀與HP-8510C網路分析儀量測元件的直流、高頻特性，此外，也利用實驗室的Maury load pull 系統，量測元件的功率特性；第三章討論利用雙閘極E/E 和E/D-Mode pHEMT元件所設計的Ka-band 微波增益放大器，驗證雙閘極E/E 和E/D-Mode pHEMT元件在高頻電路上的可行性，第四章則是利用Lange耦合器搭配兩個獨立的微波增益放大器實現平衡式Ku /K-band的微波增益放大器；第五章則是延續雙閘極的架構，利用0.15 μm pHEMT疊接的架構設計一個V-band 寬頻低雜訊放大器；第六章歸納本論結果，並做一個結論。
摘要(英)	The technology of the microwave is developed fast, the devices and the circuits about microwave is so important. We have studied the microwave/ millimeter-wave Amplifier Design using GaAs enhancement/depletion mode dual-gate pHEMT in the thesis. Because of the dual-gate E/D-Mode pHEMT owning the advantage of high fmax and low cost, we hope to design amplifier applied at high frequency using 0.5 μm dual-gate E/D-Mode pHEMT. In chapter two, we have analyzed the performance of the 0.5 μm dual-gate E/E and E/D-Mode pHEMT. In the chapter three and four, we have designed the amplifier applied at high frequency using 0.5 μm dual-gate E/E and E/D-Mode pHEMT. In chapter five, we have designed the V-band low noise amplifier using0.15 μm pHEMT according to dual-gate topology. In the final chapter, we summarized the results in this thesis.
關鍵字(中)	★ 增強/空乏型 ★ 高電子遷移率電晶體 ★ 放大器 ★ 雙閘極 ★ 砷化鎵	關鍵字(英)	★ amplifier ★ pHEMT ★ dual-gate ★ e/d mode
論文目次	第一章 緒論 1 1-1 研究背景與動機 1 1-2 論文架構 2 第二章 雙閘極高電子遷移率場效電晶體元件特性探討與設計考量 4 2-1 簡介 4 2-2 雙閘極元件直流特性分析 4 2-2-1 雙閘極增強-增強型元件直流特性分析 4 2-2-2 雙閘極增強-空乏型元件直流特性分析 7 2-2-3 雙閘級增強-增強型與增強-空乏型直流特性比較 9 2-3 雙閘極元件高頻特性分析 11 2-3-1 雙閘極增強-增強型元件高頻特性分析 11 2-3-2 雙閘極增強-空乏型元件高頻特性分析 14 2-3-3 雙閘級增強-增強型與增強-空乏型高頻特性比較 16 2-4 雙閘極元件功率特性分析 17 2-4-1 雙閘極增強-增強型元件功率特性分析 17 2-4-2 雙閘極增強-空乏型元件功率特性分析 20 2-4-3雙閘級增強-增強型與增強-空乏型功率量測比較 22 第三章 Ka-Band微波增益放大器電路設計 24 3-1 簡介 24 3-2 Ka-Band微波增益放大器設計概念 24 3-3 Ka-Band微波增益放大器電路設計 26 3-3-1 Ka-Band微波增益放大器元件選擇 26 3-3-2 Ka-Band微波增益放大器設計方式 27 3-4 Ka-Band微波增益放大器模擬結果與佈局 29 3-4-1 Ka-Band微波增益放大器模擬結果 29 3-4-2 Ka-Band微波增益放大器佈局說明 31 3-5 Ka-Band微波增益放大器量測結果 32 3-6結果與討論 35 第四章 平衡式Ku /K-Band微波增益放大器設計 39 4-1 簡介 39 4-2 平衡式Ku /K-Band微波增益放大器設計概念 39 4-3 平衡式Ku /K-Band微波增益放大器設計 40 4-3-1 平衡式Ku /K-Band微波增益放大器架構簡介 40 4-3-2 Lange耦合器介紹與模擬及其量測結果 41 4-3-2 平衡式Ku /K-Band微波增益放大器設計方式 44 4-4 平衡式Ku /K-Band微波增益放大器模擬結果與佈局 47 4-4-1 平衡式Ku /K-Band微波增益放大器模擬結果 47 4-4-2 平衡式Ku /K-Band微波增益放大器佈局說明 50 4-5 平衡式Ku /K-Band微波增益放大器量測結果 51 4-6 結果與討論 56 第五章 V-Band疊接式寬頻低雜訊放大器應用與電路設計 57 5-1 簡介 57 5-2 V-Band發展與應用 57 5-3 V-Band疊接式寬頻式低雜訊放大器模擬結果與佈局 59 5-3-1架構說明 59 5-3-2 模擬結果 63 5-3-3 佈局說明 66 5-4 V-Band疊接式寬頻低雜訊放大器量測結果 67 5-5 結果與討論 70 第六章 結論 71 參考文獻 73
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指導教授	詹益仁(Yi-Jen Chan)	審核日期	2007-6-22
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