氮化鎵基材電晶體製作與分析

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顏瑞成(Ruie-Cheng Yan) 查詢紙本館藏

畢業系所

電機工程學系

論文名稱

氮化鎵基材電晶體製作與分析
(GaN-based Transistors Fabrication And Study)

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摘要(中)

本論文主要研究內容為氮化鎵基材電晶體(GaN-based Transistors)的製作與量測分析，研究內容分為兩個部分：(1) 平台式氮化鋁鎵/氮化鎵異質接面雙載子電晶體(Mesa-type AlGaN/GaN Heterojunction Bipolar Transistors) (2) 平面式氮化鎵雙載子接面電晶體(Planar-type GaN Bipolar Junction Transistors)。提出以有機金屬化學氣相磊晶系統(Metal-organic Chemical Vapor Deposition, MOCVD)成長於藍寶石(Sapphire)的基板，製作出氮化鎵基材電晶體，並針對元件進行直流量測、分析與討論。
平台式氮化鋁鎵/氮化鎵異質接面雙載子電晶體量測部份主要以室溫直流量測，量測的射極面積為110×110 μm2，電晶體在VBE ＝0.9 V時的電流增益為4.3，崩潰電壓為3 V。另外，由於基極區p型氮化鎵有較低電洞濃度，導致有較差歐姆接觸特性及較大之電阻。為了避免基極區p型氮化鎵乾蝕刻所造成的表面損傷，因此利用離子佈植方式，將高能量矽(Si)離子直接植入晶體中，製造出平面式氮化鎵雙載子接面電晶體，並且探討雙載子接面電晶體的製造技術與元件分析。

摘要(英)

This project focused on fabrication of GaN-based transistors and its measurement, which are to be elaborated in two kinds── (1) Mesa-type AlGaN/GaN heterojunction bipolar transistors (HBT), and (2) Planar-type GaN bipolar junction transistors (BJT). The way to the ultimate target, GaN-based transistors, is to epitaxy GaN material on sapphire substrates through metal-organic chemical vapor deposition technology (MOCVD). Detailed analysis and discussion would be made later after the device underwent DC measurement.
The measurement of the mesa-type AlGaN/GaN heterojunction bipolar transistors mainly takes the room temperature DC gauging, with 110×110 μm2 emitter area. The current gain of the transistor in Gummel plot is 4.3 with the VBE ＝0.9 V, the break-down voltage of which is 3 V. Moreover, the lower hole concentration of the base region p-type GaN leads to worse ohmic contact characteristic and a large resistance. Therefore, to avoid the damage caused by the dry etching on the base region p-type GaN, ion implanter is administered. Silicon (Si) ion implanted upon the sample with high energy recipe, bringing out planar-type GaN bipolar junction transistors, the characteristics of which will be discussed later and analyzed in detailed figures.

關鍵字(中)

★ 離子佈植
★ 異質接面
★ 氮化鎵
★ 電晶體

關鍵字(英)

★ ion implantation
★ GaN
★ transistors
★ heterojunction

論文目次

摘要 I
目錄 IV
圖目錄 VII
表目錄 X
第一章導論 1
1.1 研究動機 1
1.2 氮化鎵基材電晶體介紹 2
1.3 目前相關研究狀況與比較 3
1.4 研究摘要 5
第二章 P型氮化鎵金屬半導體接觸 6
2.1 簡介 6
2.2 金屬與半導體接觸原理 6
2.2.1 蕭基接觸 6
2.2.2 歐姆接觸 9
2.2.3 傳輸線模型原理 10
2.3 P型氮化鎵金屬半導體製作與量測 12
2.3.1 P型氮化鎵金屬半導體特性探討 12
2.3.2 製程流程 14
2.3.3 歐姆接觸改善 16
2.4 結論 19
第三章氮化鋁鎵/氮化鎵異質接面雙載子電晶體 20
3.1 簡介 20
3.2 氮化鎵材料之特性 20
3.3 元件結構之特性 21
3.4 電晶體元件製作流程 22
3.5 電晶體特性量測與討論 29
3.6 結論 39
第四章平面結構氮化鎵雙載子接面電晶體 40
4.1 簡介 40
4.2 離子佈植系統 40
4.3 元件結構之特性 43
4.4 電晶體元件製作流程 43
4.5 電晶體特性量測與討論 49
4.5.1 矽離子佈植於氮化鎵之霍爾量測 49
4.5.2 元件特性量測 52
4.6 結論 59
第五章結論與未來工作 61
參考文獻 63

參考文獻

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指導教授

辛裕明(Yue-ming Hsin)

審核日期

2008-7-10

推文