微波活化對被植入於矽中之氫離子之研究

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徐育愷(Yu-Kai Hsu) 查詢紙本館藏

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機械工程學系

論文名稱

微波活化對被植入於矽中之氫離子之研究
(The study of microwave activation on hydrogen ions implanted with silicon)

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摘要(中)

隨著絕緣層矽晶材料（SOI，Silicon-on-Insulator）及異質晶圓薄膜轉移技術的發展，帶領半導體工業進入了另一個世代。智切法(Smart-Cut Process) 是一種結合離子佈植與晶圓鍵合技術之構想的薄膜轉移製程，但其存在著高溫熱處理所帶來之熱應力、耗能源及低生產效率等缺點。一種興新的能源—微波能，期能取代傳統高溫退火製程，改善其缺失。
本研究即在探討微波活化效應對被植入於矽中之氫離子的激發作用。實驗以不同的微波時間和功率照射各種氫離子佈植劑量之矽晶圓試片，並觀察分析其之間的關係。由實驗結果發現氫離子佈植劑量為4×1016ion/㎝2之試片，在微波頻率2.45GHz及微波功率5W下照射60秒即能在表面形成微小氣泡，顯示微波確實能激發氫氣離子；而佈植劑量為5×1015ion/㎝2之試片，在高功率微波照射下亦無反應，顯示氫離子劑量須達臨界劑量，在微波照射激發下才能聚集形成氣泡。再者，微波功率愈大、微波時間愈長，氫氣離子愈容易被激發而獲得結合成氣體分子之動能，最後聚集造成氣泡破裂，甚至達到薄膜剝離的結果。

摘要(英)

The development in Silicon-on-Insulator（SOI）materials and dissimilar materials layer transfer process have led the thin film semiconductor technology into a new era. Smart-cut process is a layer transfer process which combines three main steps: ion implantation, wafer bonding, and layer splitting. However, it still has some drawbacks such as high thermal stress, high energy consumption and low production efficiency, resulting from the thermal treatment. Therefore it is highly expected that an emerging source of energy, the microwave energy, will replace the traditional annealing process and thus solve those problems.
The purpose of this paper is to study the priming excitation effect that microwave activation effect has on the hydrogen ions which were implanted into the silicon wafer. In the experiment, various silicon wafers implanted with different dosage of hydrogen ions were irradiated by microwave at different length of time and microwave power, with a view to examining the relationship between each other. The results indicated that, irradiating at 5W microwave power for 60 seconds, blisters will occur on the surface of the wafers which were implanted with 4×1016ion/㎝2 of hydrogen ions. This showed that the microwave can indeed excite hydrogen ions. On the other hand, the wafers implanted with 5×1015ion/㎝2 of ions had no reactions even when irradiated at higher microwave power. It showed that the implanted hydrogen ions have to reach a critical dosage so as to form blisters under the microwave irradiation. In addition, the higher microwave power and the longer irradiation time, the more hydrogen ions can be excited and gain the energy to form gas molecule. Finally the hydrogen ions aggregated and caused the bubbles to burst or the thin film to ablate.

關鍵字(中)

★ 微波活化
★ 離子佈植

關鍵字(英)

★ ion implanted
★ microwave activation

論文目次

摘要 ....................................................Ⅰ
誌謝 ....................................................Ⅳ
總目錄 ..................................................Ⅴ
圖目錄 ..................................................Ⅶ
表目錄 ..................................................Ⅷ
第一章前言
1.1 研究背景 .........................................1
1.2 研究動機 .........................................2
第二章離子佈植應用於薄膜轉移製程
2.1 離子佈植導致薄膜轉移技術 .........................4
2.1.1 智切法製程介紹 ...............................4
2.1.2 薄膜轉移過程概述 .............................5
2.2 氫在半導體晶圓中之現象 ...........................6
2.3 氣泡形成與剝離機制 ...............................7
2.3.1 氣泡的出現與微裂縫的成長 .....................8
2.3.2 氣泡破裂與剝離現象 ...........................9
2.4 面臨的問題與突破 ................................10
第三章微波化學
3.1 微波簡介 ........................................19
3.2 微波與材料間的相互反應 ..........................19
3.2.1 電偶極矩極化 ................................21
3.2.2 離子傳導 ....................................22
3.3 微波熱力的特性 ..................................22
3.3.1 材料的介電性質 ..............................23
3.3.2 轉變溫度輪廓 ................................24
3.4 微波對矽中氫離子的激發作用 ......................25
第四章實驗方法與步驟
4.1 實驗流程 ........................................29
4.1.1 離子佈植 ....................................29
4.1.2 微波活化 ....................................29
4.1.3 影像觀測 ....................................30
第五章實驗結果與討論
5.1 微波功率及氫離子佈植劑量之相互關係 ..............36
5.1.1 氫離子佈植劑量對微波活化之影響 ..............36
5.1.2 微波功率對氫氣離子活化之影響 ................37
5.2 微波時間對氫氣離子活化之影響 ....................38
第六章結論 ............................................45
參考文獻 ................................................46
論文發表 ................................................50

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指導教授

李天錫(Tien-Hsi Lee)

審核日期

2006-7-20

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