薄膜電性效應對等離子體注入之影響研究

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林宛蓉(Wan-jung Lin) 查詢紙本館藏

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機械工程學系

論文名稱

薄膜電性效應對等離子體注入之影響研究
(The Effect of The Thin Film Electric Characteristic for Plasma Immersion Ion Implantation)

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摘要(中)

一般製作高品質的SOI 薄膜技術，通常是以離子佈植技術結合晶
圓鍵合的智切法，但由於離子佈植技術具有單方向(line-of-sight)離子
佈植限制，且又因離子束的截面積很小，佈植時需耗費較多掃瞄時
間，造成佈植時間較長，產能較低，又加上設備昂貴等缺點。因此，
本論文主要目的是利用電漿浸沒離子佈植技術 ( Plasma immersion
ion implantation ，PIII )取代離子佈植技術。而PIII 的缺點是缺少質
量分析器和佈植環境低真空度，因此，雜質的存在是PIII 面臨到最大
的難題。為了改善這些缺陷，本實驗在氧化層上方成長一多晶矽層，
作為阻擋雜質的犧牲層，已成功地克服雜質的問題。另外利用多晶矽
摻雜的方式，改變薄膜電性，藉由薄膜電性的改變以增加氫離子植入
矽中的數量。本論文中主要也會針對薄膜電性對電漿離子植入之影響
作一深入的探討與研究。

摘要(英)

It’s a well known in the art to produce the high quality silicon layer
of SOI wafer by Smart-Cut® technology. However, the conventional ion
implantation in Smart-Cut® process, a line-of-sight beam, which has a
small cross-sectional area causes long implantation time, low throughput
and expensive equipment-cost. Therefore, the main purpose of this study
is to use plasma immersion ion implantation (PIII) in the ion implantation
step. Due to the absence of a mass spectrometer and the non-UHV
environment, the presence of impurities during implantation becomes the
maim problem of applying PIII technology. In order to minimize the
impurity concentration, it is deposited a sacrificial polycrystalline silicon
(poly-Si) layer above the silicon oxide layer. According to the
experimental results, the polycrystalline silicon layer can reduce those
problems of impurities successfully. The second topic of this study is to
dope the poly-Si layer and utility the electric characteristics of it for
increasing the amount of implanted hydrogen ions. This study also
confers to the effects in PIII made by the electric characteristic of poly-Si layer.

關鍵字(中)

★ 電漿浸沒離子佈植
★ 離子佈植
★ 絕緣層矽晶

關鍵字(英)

★ silicon on insulator
★ plasma immersion ion implantation
★ ion implantation

論文目次

總目錄
摘要…………………………………………………………………I
英文摘要……………………………………………………………II
誌謝辭………………………………………………………………III
總目錄………………………………………………………………IV
圖目錄………………………………………………………………VI
表目錄………………………………………………………………IX
第一章緒論...............................................1
1.1 研究背景............................................1
1.2 研究動機............................................3
第二章文獻回顧...........................................6
2.1 薄膜轉移製程技術....................................6
2.1.1 SIMOX(Separation by Implantation Oxygen)...........6
2.1.2 SPIMOX(Separation by Plasma Implantation of Oxygen)7
2.1.3 BESOI (Bonded and etched-back SOI).................8
2.1.4 ELTRAN®(Epitaxial Layer TRANsfer)..................8
2.1.5 Smart-Cut®.........................................9
2.2 絕緣層矽晶薄膜之優點...............................11
第三章離子佈植技術......................................22
3.1 離子佈植簡介.......................................22
3.1.1 離子佈植原理與機制................................22
3.2 電漿浸沒離子佈植簡介...............................25
3.2.1 電漿浸沒離子佈植原理與機制........................26
3.3 電漿浸沒離子佈植與離子佈植的比較...................28
第四章實驗方法及步驟....................................38
4.1 實驗流程...........................................38
4.1.1 試片準備及清洗....................................38
4.1.2 結晶矽薄膜沈積....................................39
4.1.3 離子佈植..........................................41
4.1.4 電漿浸沒離子佈植..................................42
4.1.5 多晶矽移除........................................42
4.1.6 試片分析..........................................43
4.2　實驗設備與分析儀器.................................44
4.2.1 實驗設備..........................................44
4.2.2 分析儀器..........................................44
第五章實驗結果與討論....................................59
5.1 雜質的阻擋.........................................59
5.2 佈值時間對氫離子植入含量的影響.....................60
5.3 摻雜的作用與影響...................................61
第六章結論..............................................79
參考文獻.................................................81

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指導教授

李天錫(Tien-his Lee)

審核日期

2008-6-27

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